SI4178DY-T1-E3 Vishay, SI4178DY-T1-E3 Datasheet

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SI4178DY-T1-E3

Manufacturer Part Number
SI4178DY-T1-E3
Description
MOSFET N-CH 30V 12A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4178DY-T1-E3

Input Capacitance (ciss) @ Vds
405pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
5W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4178DY-T1-E3
Manufacturer:
VISHAY/PBF
Quantity:
406 720
Part Number:
SI4178DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4178DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
30
(V)
0.033 at V
0.021 at V
S
S
G
S
R
DS(on)
1
2
3
4
GS
GS
J
(Ω)
Top View
= 4.5 V
= 10 V
= 150 °C)
SO-8
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
12
6
(A)
Steady State
D
D
D
D
a
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
3.7 nC
g
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Notebook System Power
• Low Current DC/DC
Definition
Typical
g
42
19
and UIS Tested
®
Power MOSFET
G
- 55 to 150
8.3
6.7
2.4
1.5
Limit
N-Channel MOSFET
± 25
9.7
2
12
4.2
3.2
30
40
10
b, c
5
5
b, c
b, c
b, c
b, c
a
a
Maximum
S
D
53
25
Vishay Siliconix
Si4178DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4178DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4178DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4178DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 65718 S10-0212-Rev. A, 25-Jan- 2.0 2.5 3.0 600 500 400 300 200 100 1.6 1.4 1 1.0 0.8 0 Si4178DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS ...

Page 4

... Si4178DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2 250 μA D 2.4 2.2 2.0 1.8 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.050 0.045 0.040 0.035 ° ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65718 S10-0212-Rev. A, 25-Jan- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4178DY Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...

Page 6

... Si4178DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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