SI1405DL-T1-GE3 Vishay, SI1405DL-T1-GE3 Datasheet
SI1405DL-T1-GE3
Specifications of SI1405DL-T1-GE3
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SI1405DL-T1-GE3 Summary of contents
Page 1
... D Definition ± 1.8 • TrenchFET ± 1.6 • Compliant to RoHS Directive 2002/95/EC ± 1.4 SOT-363 6 D Marking Code Lot Traceability and Date Code 4 S Part # Code Top View Si1405DL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ...
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... Si1405DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... J 1 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71073 S10-0935-Rev. C, 19-Apr-10 1000 °C J 0.8 1.0 1.2 Si1405DL Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.2 1.0 0.8 0.6 ...
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... Si1405DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Junction Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...