SI5402DC-T1-E3 Vishay, SI5402DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5402DC-T1-E3
• Description: MOSFET N-CH D-S 30V 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5402DC-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
0.10
0.08
0.06
0.04
0.02
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 4.9 A
On-Resistance vs. Drain Current
0.2
= 15 V
4
3
V
SD
Q
g
V
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
I
0.4
GS
D
- Drain Current (A)
Gate Charge
= 4.5 V
8
6
T
J
= 150 °C
0.6
12
9
0.8
V
GS
T
16
12
J
= 10 V
= 25 °C
1.0
1.2
20
15
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
C
V
I
- 25
D
rss
GS
= 4.9 A
C
= 10 V
6
2
iss
T
V
V
0
J
DS
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
50
Vishay Siliconix
C
oss
I
18
D
6
75
Si5402DC
= 4.9 A
www.vishay.com
100
24
8
125
150
30
10
3