SI6413DQ-T1-E3 Vishay, SI6413DQ-T1-E3 Datasheet

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SI6413DQ-T1-E3

Manufacturer Part Number
SI6413DQ-T1-E3
Description
MOSFET DUAL P-CH 30V 1.8A 8TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6413DQ-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 8.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
800mV @ 400µA
Gate Charge (qg) @ Vgs
105nC @ 5V
Power - Max
1.05W
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6413DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 815
Part Number:
SI6413DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 20
(V)
G
D
S
S
1
2
3
4
Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.010 at V
0.013 at V
0.016 at V
R
Si6413DQ
TSSOP-8
DS(on)
Top View
J
a
= 150 °C)
GS
GS
GS
a
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
P-Channel 1.8-V (G-S) MOSFET
a
8
7
6
5
a
D
S
S
D
A
I
= 25 °C, unless otherwise noted
- 8.8
- 7.6
- 6.8
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• Load Switch
• PA Switch
• Charger Switch
Symbol
Symbol
T
R
R
J
TrenchFET
G
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
S*
D
®
Power MOSFET
Typical
- 1.35
- 8.8
- 7.0
10 s
100
1.5
1.0
60
35
* Source Pins 2, 3, 6 and 7
- 55 to 150
must be tied common.
- 20
- 30
± 8
Steady State
Maximum
- 0.95
- 7.2
- 5.7
1.05
0.67
120
83
45
Vishay Siliconix
Si6413DQ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6413DQ-T1-E3 Summary of contents

Page 1

... GS TSSOP Si6413DQ Top View Ordering Information: Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6413DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72084 S-80682-Rev. B, 31-Mar-08 8000 6400 4800 2.5 V 3200 GS 1600 °C J 0.8 1.0 1.2 Si6413DQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si6413DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 400 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse 0.01 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72084. Document Number: 72084 S-80682-Rev. B, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6413DQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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