SFH608-4X007T Vishay, SFH608-4X007T Datasheet - Page 2

• Manufacturer Part Number: SFH608-4X007T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR>160-320%
• Manufacturer: Vishay

Specifications of SFH608-4X007T

• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFH608
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
602
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Surge collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
Isolation resistance
Storage temperature range
Operating temperature range
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter voltage
Emitter base voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
Collector emitter leakage current
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
V
V
V
V
TEST CONDITION
CE
CE
CE
R
max. 10 s, dip soldering: distance
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
I
I
V
I
CE
EB
Optocoupler, Phototransistor Output,
V
I
R
V
V
to seating plane ≥ 1.5 mm
F
CE
IO
R
IO
= 10 µA
= 5 mA
= 10 µA
= 10 µA
= 6 V
= 10 V
= 500 V, T
TEST CONDITION
= 500 V, T
(1)
Low Input Current, with Base
t
t
P
P
t = 1.0 s
Connection, 5300 V
≤ 1.0 ms
≤ 10 µs
amb
amb
= 100 °C
= 25 °C
PART
SYMBOL
V
V
R
R
I
C
C
C
CEO
V
C
V
CEO
EBO
I
thja
thja
CE
CB
SYMBOL
R
EB
R
O
F
RMS
V
V
T
P
P
V
I
V
T
R
R
T
V
FSM
CBO
EBO
I
I
amb
diss
diss
ISO
CE
stg
sld
F
C
IO
IO
R
MIN.
55
6
7
- 55 to + 150
- 55 to + 100
VALUE
≥ 10
≥ 10
TYP.
1070
5300
0.01
500
100
150
175
260
1.1
2.5
≥ 7
≥ 7
25
10
16
10
10
50
70
55
55
50
6
7
12
11
Document Number: 83664
MAX.
200
1.5
10
Rev. 1.5, 10-Dec-08
UNIT
V
mW
mW
mm
mm
mA
mA
mA
°C
°C
°C
RMS
V
A
V
V
V
Ω
Ω
UNIT
K/W
K/W
µA
pF
pF
pF
pF
nA
V
V
V
V