SFH600-1X007 Vishay, SFH600-1X007 Datasheet - Page 2

• Manufacturer Part Number: SFH600-1X007
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 63-125%
• Manufacturer: Vishay

Specifications of SFH600-1X007

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83662
Rev. 1.6, 10-Dec-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between emitter
and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
Collector emitter leakage
current
COUPLER
Saturation voltage collector
emitter voltage
Capacitance (input to output)
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
I
F
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
V
TEST CONDITION
= 10 mA, I
For technical questions, contact: [e-mail]
F
= 0 V, f = 1 MHz
V
I
I
F
R
V
CE
= 60 mA
distance to seating plane ≥ 1.5 mm
R
= 10 µA
= 6 V
= 10 V
C
V
V
CE
CB
EB
IO
max. 10 s, dip soldering:
max. 10 s, dip soldering
= 2.5 mA
IO
(1)
= 500 V, T
= 5 V
Output, with Base Connection
TEST CONDITION
= 5 V
= 5 V
= 500 V, T
Optocoupler, Phototransistor
t = 1.0 s
amb
amb
SFH600-0
SFH600-1
SFH600-2
SFH600-3
PART
= 100 °C
= 25 °C
SYMBOL
V
R
R
C
C
I
I
I
I
V
C
C
CEO
CEO
CEO
CEO
CEsat
C
V
I
thja
thja
BR
CE
CB
EB
R
IO
O
F
SYMBOL
T
V
T
T
R
R
amb
T
ISO
stg
sld
IO
IO
j
MIN.
6
Vishay Semiconductors
- 55 to + 150
- 55 to + 100
TYP.
1.25
0.01
0.25
750
500
5.2
6.5
9.5
25
VALUE
2
2
2
5
≥ 10
≥ 10
5300
≥ 0.4
175
100
260
≥ 7
≥ 7
12
11
MAX.
1.65
0.4
0.6
10
35
35
35
70
SFH600
www.vishay.com
UNIT
V
mm
mm
mm
RMS
°C
°C
°C
°C
Ω
Ω
UNIT
K/W
K/W
µA
pF
pF
pF
pF
nA
nA
nA
nA
pF
V
V
V
587