4N30S Fairchild Semiconductor, 4N30S Datasheet - Page 6

• Manufacturer Part Number: 4N30S
• Description: Transistor Output Optocouplers PHOTO DARL
• Manufacturer: Fairchild Semiconductor

Specifications of 4N30S

• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 3 V
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
Typical Performance Curves
1000
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
1
0.1
10
Fig. 7 Switching Speed vs. Load Resistor
I
V
T
F
CC
A
= 10 mA
= 25 C
Fig. 9 Normalized t
100
= 10 V
R
INPUT
BE
- BASE RESISTANCE (k
1
R-LOAD RESISTOR (k
T
I
F
off
T
1000
T
on
r
R
TEST CIRCUIT
BE
T
f
off
vs. R
10
Figure 11. Switching Time Test Circuit and Waveforms
I
V
10000
C
BE
CC
(Continued)
R
V
= 10V
I
C
L
CC =
OUTPUT
R
= 100
= 2 mA
L
Adjust I
10 V
F
100000
to produce I
100
6
C
= 2 mA
10000
0.001
1000
0.01
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
10
0
10%
90%
V
T
A
CE
t
on
= 25 C
Fig. 10 Dark Current vs. Ambient Temperature
= 10 V
20
Fig. 8 Normalized t
T
100
t
r
A
R
WAVE FORMS
BE
- AMBIENT TEMPERATURE ( C)
- BASE RESISTANCE (k
40
t
t
f
1000
off
INPUT PULSE
OUTPUT PULSE
on
60
vs. R
10000
BE
R
V
I
C
L
CC =
80
www.fairchildsemi.com
= 100
= 2 mA
10 V
100000
100