MOCD211R1VM Fairchild Semiconductor, MOCD211R1VM Datasheet - Page 3

Transistor Output Optocouplers 2Ch Optocoupler Phototransistor

MOCD211R1VM

Manufacturer Part Number
MOCD211R1VM
Description
Transistor Output Optocouplers 2Ch Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MOCD211R1VM

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
2 Channel
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MOCD211R1VM
Manufacturer:
FAIRCHILD
Quantity:
3 500
Company:
Part Number:
MOCD211R1VM
Quantity:
12 590
©2005 Fairchild Semiconductor Corporation
MOCD211M Rev. 1.0.1
Electrical Characteristics
*Typical values at T
Notes:
1. Input-Output Isolation Voltage, V
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
4. Current Transfer Ratio (CTR) = I
EMITTER
DETECTOR
COUPLED
Symbol
V
BV
BV
I
I
CE (sat)
CTR
V
R
C
CEO1
CEO2
C
ISO
V
t
t
I
C
ISO
on
off
ISO
ISO
t
t
CEO
ECO
CE
R
r
f
F
rating of 2500 V
Input Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Capacitance
Current Transfer Ratio
Collector-Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
Isolation Resistance
Isolation Capacitance
A
Parameter
= 25°C
AC(rms)
(2)
for t = 1 min. is equivalent to a rating of 3,000 V
(2)
(4)
(1)(2)(3)
C
ISO
/I
(T
F
, is an internal device dielectric breakdown rating.
A
x 100%.
= 25°C unless otherwise specified)
I
V
V
V
I
I
f = 1.0MHz, V
I
I
I
(Fig. 6)
I
(Fig. 6)
I
(Fig. 6)
I
(Fig. 6)
f = 60Hz, t = 1 min.
V
V
F
C
E
F
C
C
C
C
C
R
CE
CE
I-O
I-O
= 10mA
= 10mA, V
= 100µA
= 100µA
= 2.0mA, I
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 6.0V
= 10 V, T
= 10 V, T
= 500V
= 0V, f = 1MHz
Test Conditions
CE
F
A
A
CE
CC
CC
CC
CC
= 10mA
= 25°C
= 100°C
3
= 10V
= 0V
= 10V, R
= 10V, R
= 10V, R
= 10V, R
L
L
L
L
= 100
= 100
= 100
= 100
AC(rms)
Min.
2500
10
7.0
30
20
11
for t = 1 sec.
Typ.* Max.
0.001
1.15
100
1.0
1.0
7.0
7.5
5.7
3.2
4.7
0.2
18
10
100
1.5
0.4
50
www.fairchildsemi.com
Vac(rms)
Unit
µA
nA
µA
pF
pF
pF
µs
µs
µs
µs
%
V
V
V
V

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