MPSW45ARLRA ON Semiconductor, MPSW45ARLRA Datasheet - Page 2

Darlington Transistors 1A 50V NPN

MPSW45ARLRA

Manufacturer Part Number
MPSW45ARLRA
Description
Darlington Transistors 1A 50V NPN
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPSW45ARLRA

Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92-3 (TO-226)
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
25000, 15000, 4000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPSW45ARLRAG
Manufacturer:
ST
Quantity:
1 670
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base −Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
= 100 mAdc, V
= 100 mAdc, I
= 10 mAdc, I
= 200 mAdc, V
= 500 mAdc, V
= 1.0 Adc, V
= 1.0 Adc, I
= 1.0 Adc, I
= 1.0 Adc, V
= 200 mAdc, V
= 10 Vdc, I
= 30 Vdc, I
= 40 Vdc, I
= 10 Vdc, I
B
B
C
CE
CE
E
E
C
E
E
= 2.0 mAdc)
= 2.0 mAdc)
= 0)
BE
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
MPSW45A
MPSW45A
MPSW45A
MPSW45
MPSW45
MPSW45
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CES
(BR)EBO
I
CE(sat)
BE(sat)
I
BE(on)
h
C
CBO
EBO
f
FE
T
cb
25,000
15,000
4,000
Min
100
40
50
50
60
12
150,000
Max
100
100
100
1.5
2.0
2.0
6.0
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF

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