MJE5740 ON Semiconductor, MJE5740 Datasheet - Page 3

• Manufacturer Part Number: MJE5740
• Description: Darlington Transistors 8A 300V Bipolar
• Manufacturer: ON Semiconductor

Specifications of MJE5740

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 8 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 200, 50
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2000
1000
100
100
80
60
40
20
10
0
0.1
0
V
CE
20
= 5 V
THERMAL DERATING
Figure 3. DC Current Gain
40
I
Figure 1. Power Derating
C
, COLLECTOR CURRENT (AMPS)
T
C
, CASE TEMPERATURE (°C)
60
SECOND BREAKDOWN DERATING
80
1
+ 25°C
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.1
150°C
- 55°C
1
100
Figure 5. Collector−Emitter Saturation Voltage
2
+150°C
0.2
+ 25°C
TYPICAL CHARACTERISTICS
120
h
FE
I
= 20
C
5
, COLLECTOR CURRENT (AMPS)
140
- 55°C
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0.5
10
160
1
3
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
2
1
V
I
I
B
C
CE
Figure 2. Inductive Switching Measurements
0.2
- 55°C
+ 25°C
5
Figure 4. Base−Emitter Voltage
+150°C
90% I
h
I
FE
C
, COLLECTOR CURRENT (AMPS)
= 20
B1
0.5
10
t
sv
I
C(pk)
TIME
1
90% V
10% V
CE(pk)
t
rv
2
CE(pk)
t
c
90% I
t
fi
I
C
10%
C(pk)
5
V
CE(pk)
t
ti
2% I
C
10