MJD127 ON Semiconductor, MJD127 Datasheet - Page 5

Darlington Transistors 8A 100V Bipolar

MJD127

Manufacturer Part Number
MJD127
Description
Darlington Transistors 8A 100V Bipolar
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD127

Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
TO-252-3 (DPAK)
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
10 uA
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
100, 1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJD127
Quantity:
5 510
Part Number:
MJD127
Manufacturer:
ON Semiconductor
Quantity:
247
Part Number:
MJD127
Manufacturer:
ON
Quantity:
13
Part Number:
MJD127
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJD127-1
Manufacturer:
ST
0
Part Number:
MJD127G
Manufacturer:
ON
Quantity:
20 000
Part Number:
MJD127G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD127G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJD127T4
Manufacturer:
ROHM
Quantity:
3 980
Part Number:
MJD127T4
Manufacturer:
ST
0
Part Number:
MJD127T4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
MJD127T4
Quantity:
12 500
Part Number:
MJD127T4-ST
Manufacturer:
ST
0
Part Number:
MJD127T4G
Manufacturer:
ST
0
Part Number:
MJD127T4G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJD127T4G
Quantity:
50 000
Company:
Part Number:
MJD127T4G
Quantity:
2 500
Company:
Part Number:
MJD127T4G
Quantity:
60 000
APPROX
APPROX
-12 V
R
+ 8 V
B
V
V
0.05
0.03
0.02
D
2
1
t
DUTY CYCLE = 1%
0.5
0.3
0.2
0.1
& R
r
20
15
10
, t
1
5
3
2
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
0.07
0.05
0.03
0.02
0.01
f
0
≤ 10 ns
0.7
0.5
0.3
0.2
0.1
C
1
VARIED TO OBTAIN DESIRED CURRENT LEVELS
1
0.01
T
0.05
CURVES APPLY BELOW RATED V
SINGLE PULSE
J
0.1
0.01
D = 0.5
= 150°C
Figure 9. Switching Times Test Circuit
V
Figure 12. Maximum Forward Bias
0.02 0.03 0.05
CE
2
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
BONDING WIRE LIMIT
THERMAL LIMIT
T
SECOND BREAKDOWN LIMIT
25 ms
C
= 25°C (SINGLE PULSE)
Safe Operating rea
B
FOR t
AND V
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
≈ 100 mA
B
5
≈ 100 mA
1 ms
51
d
7
2
AND t
= 0
0.1
10
R
D
B
+ 4 V
1
r
, D
500 m
σ
1
IS DISCONNECTED
CEO
0.2 0.3
20
≈ 8 k
5 ms
30
TUT
100 m
σ
≈ 120
0.5
dc
50
Figure 11. Thermal Response
- 30 V
V
CC
http://onsemi.com
70
t, TIME OR PULSE WIDTH (ms)
R
1
C
100
SCOPE
2
5
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150_C.
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
= 6.25°C/W
0.07
0.05
- T
0.7
0.5
0.3
0.2
0.1
There are two limitations on the power handling ability of
The data of Figure 12 is based on T
= r(t) R
5
3
2
1
0.1
C
5
= P
qJC
(pk)
V
I
I
T
C
B1
1
CC
J
/I
t
q
10
s
= 25°C
B
= I
JC(t)
0.2
T
= 30 V
= 250
B2
J(pk)
0.3
20
I
Figure 10. Switching Times
C
, COLLECTOR CURRENT (AMP)
may be calculated from the data in
30
0.5
t
d
@ V
PNP
NPN
0.7
P
50
(pk)
BE(off)
DUTY CYCLE, D = t
1
t
= 0 V
1
t
100
f
t
2
J(pk)
2
200 300
3
1
= 150_C; T
/t
2
t
r
5
500
C
− V
7
J(pk)
1000
C
10
CE
is

Related parts for MJD127