MUN5133DW1T1 ON Semiconductor, MUN5133DW1T1 Datasheet - Page 3

Digital Transistors 100mA 50V BRT PNP

MUN5133DW1T1

Manufacturer Part Number
MUN5133DW1T1
Description
Digital Transistors 100mA 50V BRT PNP
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN5133DW1T1

Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhm
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Package / Case
SC-88
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
- 0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5133DW1T1G
Manufacturer:
ON
Quantity:
30 000
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
Collector-Emitter Saturation Voltage
DC Current Gain
(V
(I
(I
(I
(V
C
C
C
EB
CE
= −10 mA, I
= −10 mA, I
= −10 mA, I
= −6.0 V, I
= −10 V, I
B
C
B
B
C
= −0.3 mA)
= −5.0 mA)
= −5 mA)
= −1 mA)
= 0)
Characteristic
CB
CE
= −50 V, I
C
= −50 V, I
= −10 mA, I
(T
A
= 25°C unless otherwise noted, common for Q
E
= 0)
B
C
= 0)
= −2.0 mA, I
E
= 0)
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B
= 0)
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
I
I
CE(sat)
I
h
CBO
CEO
EBO
FE
1
and Q
Min
−50
−50
160
160
3.0
8.0
35
60
80
80
15
80
80
80
80
80
2
)
Typ
100
140
140
250
250
140
130
140
130
140
5.0
60
15
27
−0.18
−0.13
−0.05
−0.13
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−0.25
−100
−500
Max
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.2
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc

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