F4-75R06W1E3 Infineon Technologies, F4-75R06W1E3 Datasheet
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F4-75R06W1E3
Manufacturer Part Number
F4-75R06W1E3
Description
IGBT Modules N-CH 600V 100A
Manufacturer
Infineon Technologies
Datasheet
1.F4-75R06W1E3.pdf
(9 pages)
Specifications of F4-75R06W1E3
Configuration
Quad
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY1B
Ic (max)
75.0 A
Vce(sat) (typ)
1.45 V
Technology
IGBT3
Housing
EasyPACK 1B
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
F4-75R06W1E3
Manufacturer:
SAMSUNG
Quantity:
660 000
Part Number:
F4-75R06W1E3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
F4-75R06W1E3
Quantity:
54
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