SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 2

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
collector connection. PCB is vertical without blown air.
2)
Power Semiconductors
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
2)
j
= 25 C, unless otherwise specified
Symbol
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
i s s
o s s
r s s
G a t e
V
V
T
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
V
10 0 V V
T
C
j
j
j
j
j
G E
G E
C E
C E
C E
C E
G E
C C
G E
G E
=2 5 C
=1 5 0 C
= 35 0 A , V
=2 5 C
=1 5 0 C
2
=1200V,V
=0V,V
= 0V , I
= 20 V , I
= 25 V ,
= 0V ,
= 96 0 V, I
= 15 V
= 15 V ,t
= 15 V , I
Conditions
Conditions
1 5 0 C
C C
2
G E
(one layer, 70 m thick) copper area for
C
S C
= 5 00 A
C
=20V
12 0 0 V,
C E
= 8 A
C
C
G E
=8 A
= 8 A
10 s
= V
=0V
G E
1200
min.
2.5
3
-
-
-
-
-
-
-
-
-
-
SGB07N120
Max. Value
Value
typ.
720
3.1
3.7
40
60
40
70
75
1
4
6
7
-
-
-
-
Rev. 2_2
max.
100
400
100
870
3.6
4.3
75
50
90
5
-
-
-
-
Apr 07
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A