BZV55-C8V2,115 NXP Semiconductors, BZV55-C8V2,115 Datasheet - Page 2

• Manufacturer Part Number: BZV55-C8V2,115
• Description: DIODE ZENER 8.2V 500MW SOD80C
• Manufacturer: NXP Semiconductors
• Type: Voltage Regulatorr

Specifications of BZV55-C8V2,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Mounting Type: Surface Mount
• Power - Max: 500mW
• Tolerance: ±5%
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Voltage - Zener (nom) (vz): 8.2V
• Impedance (max) (zzt): 15 Ohm
• Zener Voltage: 8.2 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 4.6 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.7 uA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Package Type: Mini MELF
• Zener Voltage (typ): 8.2V
• Zener Test Current: 5mA
• Knee Impedance: 15Ohm
• Operating Temperature Classification: Military
• Rev Curr: 700nA
• Mounting: Surface Mount
• Pin Count: 2
• Operating Temp Range: -65C to 200C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933699500115::BZV55-C8V2 T/R::BZV55-C8V2 T/R

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
BZV55_SER
Product data sheet
Table 3.
[1]
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
Type number
BZV55-B2V4 to
BZV55-C75
Type number
BZV55-B2V4 to BZV55-C75
Symbol
I
I
P
T
Symbol
P
T
R
R
F
ZSM
stg
j
ZSM
tot
th(j-a)
th(j-sp)
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
t
Device mounted on a ceramic substrate of 10  10  0.6 mm.
Device mounted on a ceramic substrate of 10  10  0.6 mm.
p
= 100 s; square wave; T
Ordering information
Marking codes
Limiting values
Thermal characteristics
[1]
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 5 — 26 January 2011
j
= 25 C prior to surge
Description
hermetically sealed glass surface-mounted
package; 2 connectors
Conditions
T
T
Conditions
in free air
amb
tp
 50 C
 50 C
Marking code
marking band
[1]
[1]
[2]
[2]
[1]
BZV55 series
Min
-
-
-
-
-
65
65
Min
-
-
Voltage regulator diodes
Typ
-
-
© NXP B.V. 2011. All rights reserved.
Max
250
see
Table 8
and
40
400
500
+200
+200
9
Max
380
300
Version
SOD80C
Unit
mA
W
mW
mW
C
C
Unit
K/W
K/W
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