GR881 GREENWICH INSTRUMENTS, GR881 Datasheet
GR881
Manufacturer Part Number
GR881
Description
IC, NVRAM, 64KBIT, 100NS, DIP-28
Manufacturer
GREENWICH INSTRUMENTS
Datasheet
1.GR881.pdf
(2 pages)
Specifications of GR881
Memory Size
64Kbit
Memory Configuration
8K X 8
Access Time
100ns
Supply Voltage Range
4.75V To 5.5V
Memory Case Style
DIP
No. Of Pins
28
Operating Temperature Range
-20°C To +70°C
Rohs Compliant
Yes
Nvram Features
Internal Battery
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
GR881
Manufacturer:
SOSHIN
Quantity:
3 717
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Part Number:
GR8810SCG
Manufacturer:
NANYA
Quantity:
1 000
Part Number:
GR8810SCG
Manufacturer:
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Quantity:
20 000
When powered down, the GR881 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and user
definable lookup tables, etc.
The GR881 is a 8192 word by 8 bits (8K x 8) non-
volatile CMOS Static Ram, fabricated from advanced
silicon gate CMOS technology and a high reliability
lithium power cell.
The pin-out of the GR881 conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR881 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR881.
The GR881 can, without external power, retain data
almost indefinitely. The limiting factor will be the shelf
life of the lithium cell, which is typically ten years. It
is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for
disposal.
Greenwich Instruments Ltd.,
Meridian House, Park Road,
DISPOSAL INSTRUCTIONS
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
NON-VOLATILE RAM
Fax: 08700 505 405
DESCRIPTION
APPLICATION
GR881 (8K x 8)
01322 668 724
t
t
t
t
t
VTH
3.2V
Symbol
Vdd
VTH
F
R
REC
DR
PD
Vdd
Symbol
Vdd
Vi/o
Temp
Symbol
Vdd
Vin (1)
Vin (0)
Iin (any other pin)
Vout (1)(Iout = –1mA)
Vout (0)(Iout = +2mA)
Idd (Active)
Idd (Deselected)
Tcycle
Cin (any pin)
CE
H
L
L
L
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
0V
PIN CONNECTIONS
CE at Vin(1) before power down 0
DATA RETENTION OPERATING CONDITIONS
Operating supply voltage
Data retention voltage
Vdd slew to 0V
CE to O/P valid from power up
Data retention time
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
t
Vdd slew 0V to 5.0V
H
L
X
X
PD
>
<
ABSOLUTE MAXIMUM RATINGS
Parameter
WR
<
X
H
H
L
t
F
OPERATING CONDITIONS
Min
– 0.3
– 0.3
– 20
28
27
26
25
24
23
22
21
20
19
18
17
16
15
<
OPERATING MODE
>
– 0.3
– 1.0
MODE
Unsel.
Unsel.
Read
Write
Vdd
WR
CE
A8
A9
A11
OE
A10
CE
D7
D6
D5
D4
D3
Min
4.75
2.2
2.4
2
1
t
DR
+70
Pin
A0-A12
D0-D7
OE
CE
WR
Vdd
GND
Max
7.0
Vdd +0.3
Typ
5.0
30
1.0
10
OUTPUT
Hi-Z
Hi-Z
Dout
Din
PIN DESIGNATIONS
1
4.75
Min
CE
15
15
Vdd+0.3
2
+1.0
Max
100
5.5
0.8
0.4
<
Function
Address I/P`s
Data in/out
Output Enable
Chip Enable
Write Enable
+5Volt Power
Ground
Typ
5.0
4.5
10
>
t
Standby
Active
Active
Active
R
ldd
>
Max
5.50
>
15
deg. C
Volts
Unit
Volts
Units
Volts
Volts
Volts
Volts
Volts
mA.
mA.
µA.
nS.
<
pF
t
REC
Years
Units
Volts
Volts
µS
µS
µS
µS
When powered down, the GR881 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and user
definable lookup tables, etc.
The GR881 is a 8192 word by 8 bits (8K x 8) non-
volatile CMOS Static Ram, fabricated from advanced
silicon gate CMOS technology and a high reliability
lithium power cell.
The pin-out of the GR881 conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR881 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR881.
The GR881 can, without external power, retain data
almost indefinitely. The limiting factor will be the shelf
life of the lithium cell, which is typically ten years. It
is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for
disposal.
Greenwich Instruments Ltd.,
Meridian House, Park Road,
DISPOSAL INSTRUCTIONS
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
NON-VOLATILE RAM
Fax: 08700 505 405
APPLICATION
DESCRIPTION
GR881 (8K x 8)
01322 668 724
t
t
t
t
t
VTH
3.2V
Symbol
Vdd
VTH
F
R
REC
DR
PD
Vdd
Symbol
Vdd
Vi/o
Temp
Symbol
Vdd
Vin (1)
Vin (0)
Iin (any other pin)
Vout (1)(Iout = –1mA)
Vout (0)(Iout = +2mA)
Idd (Active)
Idd (Deselected)
Tcycle
Cin (any pin)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
CE
H
L
L
L
0V
PIN CONNECTIONS
Operating supply voltage
Data retention voltage
Data retention time
CE at Vin(1) before power down 0
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
DATA RETENTION OPERATING CONDITIONS
t
Vdd slew to 0V
CE to O/P valid from power up
H
L
X
Vdd slew 0V to 5.0V
X
PD
>
<
ABSOLUTE MAXIMUM RATINGS
Parameter
WR
<
X
H
H
L
t
F
OPERATING CONDITIONS
Min
– 0.3
– 0.3
– 20
28
27
26
25
24
23
22
21
20
19
18
17
16
15
<
OPERATING MODE
>
– 0.3
– 1.0
MODE
Unsel.
Unsel.
Read
Write
Vdd
WR
CE
A8
A9
A11
OE
A10
CE
D7
D6
D5
D4
D3
4.75
Min
2.2
2.4
2
1
t
DR
+70
Pin
A0-A12
D0-D7
OE
CE
WR
Vdd
GND
Max
7.0
Vdd +0.3
Typ
5.0
30
1.0
10
OUTPUT
Hi-Z
Hi-Z
Dout
Din
PIN DESIGNATIONS
1
4.75
Min
CE
15
15
Vdd+0.3
2
+1.0
Max
100
5.5
<
0.8
0.4
Function
Address I/P`s
Data in/out
Output Enable
Chip Enable
Write Enable
+5Volt Power
Ground
Typ
5.0
4.5
10
>
t
Standby
Active
Active
Active
R
ldd
>
Max
5.50
>
15
deg. C
Volts
Volts
Units
Volts
Volts
Unit
Volts
Volts
Volts
mA.
mA.
µA.
nS.
<
pF
t
REC
Years
Units
Volts
Volts
µS
µS
µS
µS
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GR881 Summary of contents
Page 1
... OPERATING CONDITIONS Min Typ Max Unit 4.75 5.0 5.5 Volts The GR881 is a 8192 word by 8 bits ( non- 2.2 Vdd+0.3 Volts volatile CMOS Static Ram, fabricated from advanced – 0.3 0.8 Volts silicon gate CMOS technology and a high reliability – 1.0 +1.0 µ ...
Page 2
... Write recovery time output disable 30 Output active from WR 10 Data setup time 40 Data HOLD TIME 0 .......... 6264., 5565., etc. REPLACES 18 > 0.38 > < 2000/95/EC > ISSUE 4 OCT 2005 GR881 ( NON-VOLATILE RAM READ CYCLE t RC < > Address Symbol t t ACC OH < > > < ACS RC < ...