RLZTE-118.2B Rohm Semiconductor, RLZTE-118.2B Datasheet
RLZTE-118.2B
Specifications of RLZTE-118.2B
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RLZTE-118.2B Summary of contents
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Diodes Zener diode RLZ8.2B Applications Voltage regulation Features 1) Grass seald envelope. (LLDS) 2) High reliability. Construction Silicon planar Absolute maximum ratings (Ta=25 C) Parameter Power dissipation Junction temperature Storage temperature Dimensions (Unit : mm) Land size figure (Unit : ...
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Diodes Electrical voltage (Ta=25 C) TYP. MIN. MAX. Iz(mA) RLZ 3.6B 3.600 3.845 20.0 RLZ 3.9B 3.890 4.160 20.0 RLZ 4.3B 4.170 4.430 20.0 RLZ 4.7B 20.0 4.550 4.800 RLZ 5.1B 4.940 5.200 20.0 RLZ 5.6B 5.450 5.730 20.0 RLZ ...
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Diodes Electrical characteristics (Ta=25 C) RLZ8.2B Mounted on epoxy board Rev.C 3/4 ...
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Diodes RLZ8.2B Rev.C 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...