AD5220BN100 Analog Devices Inc, AD5220BN100 Datasheet - Page 3

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AD5220BN100

Manufacturer Part Number
AD5220BN100
Description
Digital Potentiometer (Pots) IC
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD5220BN100

Potentiometer Ic Case Style
DIP
Peak Reflow Compatible (260 C)
No
End To End Resistance
100ohm
No. Of Pots
Single
Leaded Process Compatible
No
No. Of Pins
8
Mounting Type
Through Hole
Rohs Status
RoHS non-compliant
Taps
128
Resistance (ohms)
100K
Number Of Circuits
1
Temperature Coefficient
800 ppm/°C Typical
Memory Type
Volatile
Interface
Up/Down Counter
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Resistance In Ohms
100K
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
ABSOLUTE MAXIMUM RATINGS*
(T
V
V
A
Digital Input Voltage to GND . . . . . . . . . . . 0 V, V
Operating Temperature Range . . . . . . . . . . . –40 C to +85 C
Maximum Junction Temperature (T
Storage Temperature . . . . . . . . . . . . . . . . . . –65 C to +150 C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300 C
Package Power Dissipation . . . . . . . . . . . . . . (T
Thermal Resistance
*Stresses above those listed under Absolute Maximum Ratings
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD5220 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
CS
L
L
H
Model
AD5220BN10
AD5220BR10
AD5220BRM10
AD5220BN50
AD5220BR50
AD5220BRM50
AD5220BN100
AD5220BR100
AD5220BRM100
NOTE
The AD5220 die size is 37 mil
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DD
A
X
A
P-DIP (N-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 C/W
SOIC (SO-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 C/W
, V
–B
SOIC (RM-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . 206 C/W
= +25 C, unless otherwise noted)
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
B
X
, V
, A
CLK U/D
t
t
X
CLK
U/D
CS
W
X
–W
1
0
1
0
1
0
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, V
X
Figure 3. Detail Timing Diagram
, B
H
L
X
X
–W
t
t
t
Table I. Truth Table
JA
CL
CSS
UDS
X
k
10
10
10
50
50
50
100
100
100
Operation
Wiper Increment Toward Terminal A
Wiper Decrement Toward Terminal B
Wiper Position Fixed
. . . . . . . . . . . . . . . . . . . . . .
54 mil, 1998 sq mil; 0.938 mm
t
CH
Temperature Range
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
J
MAX) . . . . . . . . +150 C
J
t
max–T
CSH
DD
1.372 mm, 1.289 sq mm. Contains 754 transistors. Patent Number 5495245 applies.
may cause
+ 0.3 V
ORDERING GUIDE
20 mA
A
)/
DD
Package Descriptions
8-Lead Plastic DIP
8-Lead (SOIC)
8-Lead SOIC
8-Lead Plastic DIP
8-Lead (SOIC)
8-Lead SOIC
8-Lead Plastic DIP
8-Lead (SOIC)
8-Lead SOIC
JA
–3–
Pin
No.
1
2
3
4
5
6
7
8
Name
CLK
U/D
A1
GND
W1
B1
CS
V
DD
PIN FUNCTION DESCRIPTIONS
Description
Serial Clock Input, Negative Edge Triggered
UP/DOWN Direction Increment Control
Terminal A1
Ground
Wiper Terminal
Terminal B1
Chip Select Input, Active Low
Positive Power Supply
PIN CONFIGURATION
GND
CLK
U/D
A1
1
2
3
4
(Not to Scale)
TOP VIEW
AD5220
WARNING!
8
7
6
5
V
CS
B1
W1
DD
ESD SENSITIVE DEVICE
Package Options
N-8
SO-8
RM-8
N-8
SO-8
RM-8
N-8
SO-8
RM-8
AD5220

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