ADF4153BRU Analog Devices Inc, ADF4153BRU Datasheet - Page 6

• Manufacturer Part Number: ADF4153BRU
• Description: Leaded Process Compatible:No
• Manufacturer: Analog Devices Inc
• Type: Fractional N Synthesizer (RF)r

Specifications of ADF4153BRU

• Peak Reflow Compatible (260 C): No
• Rohs Status: RoHS non-compliant
• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 4GHz
• Divider/multiplier: No/Yes
• Voltage - Supply: 2.7 V ~ 3.3 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 4GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: EVAL-ADF4153EBZ1 - BOARD EVAL FOR ADF4153
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ADF4153
ABSOLUTE MAXIMUM RATINGS
T
V
Table 3.
Parameter
V
V
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
TSSOP θ
LFCSP θ
Reflow Soldering
Maximum Junction Temperature
DD
DD
P
P
A
DD
Industrial (B Version)
Extended (Y Version)
(Paddle Soldered)
Peak Temperature
Time at Peak Temperature
to GND
to V
= 25°C, GND = AGND = DGND = 0 V,
IN
to GND
to V
= AV
, RF
DD
DD
JA
JA
IN
Thermal Impedance
DD
Thermal Impedance
to GND
= DV
DD
= SDV
DD
, unless otherwise noted.
Rating
−0.3 V to +4 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to +5.8 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
−40°C to +85°C
−40°C to +125°C
−65°C to +125°C
150°C
112°C/W
30.4°C/W
260°C
40 sec
150°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. D | Page 6 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION