AM29DL323GB90EI AMD (ADVANCED MICRO DEVICES), AM29DL323GB90EI Datasheet - Page 52

• Manufacturer Part Number: AM29DL323GB90EI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29DL323GB90EI

• Memory Configuration: 4M X 8 / 2M X 16 Bit
• Supply Voltage Max: 3.6V
• Access Time, Tacc: 90nS
• Mounting Type: Surface Mount
• Supply Voltage: 3V

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP PIN AND FINE-PITCH BGA CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
50
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
14 for further information on command definitions.
Current
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Description
SS
SS
Control Pin Capacitance
Parameter Description
CC
Word Mode
Byte Mode
on all pins except I/O pins
on all I/O pins
Output Capacitance
. Test conditions: V
Input Capacitance
CC
= 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
D A T A
Typ (Note 1)
CC
Am29DL32xG
= 3.0 V, one pin at a time.
0.4
28
21
14
5
4
7
S H E E T
V
V
V
OUT
Max (Note 2)
IN
IN
= 0
= 0
= 0
150
120
210
Test Setup
63
42
5
Test Conditions
–100 mA
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
CC
150°C
125°C
TSOP
TSOP
TSOP
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Excludes 00h programming
25686B10 December 4, 2006
prior to erasure (Note 4)
Excludes system level
Typ
4.2
8.5
5.4
7.5
3.9
overhead (Note 5)
6
Comments
V
+100 mA
CC
12.5 V
Min
Max
10
20
Max
+ 1.0 V
7.5
5.0
6.5
4.7
12
9
Years
Years
Unit
Unit
pF
pF
pF
pF
pF
pF