CY7C1041D-10VXIT Cypress Semiconductor Corp, CY7C1041D-10VXIT Datasheet - Page 6

CY7C1041D-10VXIT

CY7C1041D-10VXIT

Manufacturer Part Number
CY7C1041D-10VXIT
Description
CY7C1041D-10VXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1041D-10VXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05472 Rev. *E
Switching Waveforms
Write Cycle No. 2 (BLE or BHE Controlled)
Write Cycle No. 3 (WE Controlled, OE HIGH During Write)
Note:
19. During this period the I/Os are in the output state and input signals should not be applied.
BHE, BLE
DATAI/O
ADDRESS
ADDRESS
DATA I/O
BHE, BLE
WE
CE
CE
WE
OE
NOTE 19
(continued)
t
t
SA
SA
t
HZOE
t
AW
t
AW
t
SCE
t
WC
t
[16, 17]
WC
DATA
t
t
PWE
t
t
SD
BW
t
PWE
SCE
IN
VALID
t
SD
t
HD
t
HA
t
HA
t
HD
CY7C1041D
Page 6 of 11
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