MCR8DSMT4 ON Semiconductor, MCR8DSMT4 Datasheet - Page 5

• Manufacturer Part Number: MCR8DSMT4
• Description: SCRs 600V 8A
• Manufacturer: ON Semiconductor

Specifications of MCR8DSMT4

• Breakover Current Ibo Max: 90 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
8.0
6.0
4.0
2.0
100
10
1.0
10
0
100
100
Gate−Cathode Resistance and Peak Voltage
V
I
Figure 11. Exponential Static dv/dt versus
GT
PK
400 V
600 V
= 10 mA
= 800 V
I
GT
Figure 9. Holding Current versus
R
R
GK
= 25 mA
GK
, GATE-CATHODE RESISTANCE (OHMS)
Gate−Cathode Resistance
, GATE-CATHODE RESISTANCE (OHMS)
1000
T
T
J
J
= 110°C
= 25°C
http://onsemi.com
10 K
1000
5
1000
1000
100
100
1.0
1.0
10
10
100
100
Gate−Cathode Resistance and Gate Trigger
Figure 10. Exponential Static dv/dt versus
Figure 12. Exponential Static dv/dt versus
I
I
GT
GT
Gate−Cathode Resistance and Junction
= 25 mA
= 10 mA
R
R
GK
GK
, GATE-CATHODE RESISTANCE (OHMS)
, GATE-CATHODE RESISTANCE (OHMS)
Current Sensitivity
T
J
70°C
90°C
= 110°C
Temperature
V
T
J
D
= 110°C
= 800 V
1000
1000