MRF8P26080HSR3 Freescale Semiconductor, MRF8P26080HSR3 Datasheet - Page 8

• Manufacturer Part Number: MRF8P26080HSR3
• Description: RF MOSFET Power HV8 2.6GHZ 80W NI780S-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P26080HSR3

• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-780S-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
MRF8P26080HR3 MRF8P26080HSR3
NOTE: Measurement made on the Class AB, carrier side of the device.
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
52
51
50
49
48
47
46
45
44
43
42
41
24
V
DD
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
= 28 Vdc, I
(MHz)
(MHz)
2570
2595
2620
2570
2595
2620
25
Figure 13. Pulsed CW Output Power
f
f
26
Test Impedances per Compression Level
versus Input Power @ 28 V
DQA
f = 2595 MHz
27
= 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
P1dB
P1dB
P1dB
P
Watts
in
, INPUT POWER (dBm)
50
51
49
f = 2620 MHz
28
P1dB
29
15.3 -- j13.5
17.4 -- j12.6
18.0 -- j10.3
f = 2595 MHz
Z
dBm
47.0
47.1
46.9
source
30
Ω
f = 2570 MHz
31
Watts
61.7
60.3
60.3
f = 2620 MHz
32
3.65 -- j6.25
4.26 -- j5.53
4.09 -- j5.62
Actual
P3dB
Ideal
f = 2570 MHz
Z
33
load
Ω
dBm
47.9
47.8
47.8
34
35
Freescale Semiconductor
RF Device Data