PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 5

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Confidential, Limited Internal Distribution
Data Sheet
Typical Performance
-20
-30
-40
-50
-60
-70
19
18
17
16
15
14
42
40
– DRAFT ONLY
Gain & Efficiency vs. Output Power
V
DD
Gain
Intermodulation Distortion
ƒ
= 30 V, I
44
Efficiency
1
= 2170 MHz, ƒ
V
Output Power, PEP (dBm)
DD
Power Sweep, CW
vs. Output Power
45
Output Power (dBm)
= 30 V, I
DQ
46
= 1.30 A, ƒ = 2170 MHz
(cont.)
3rd Order
DQ
2
+25°C
+85°C
–10° C
48
= 1.30 A,
= 2169 MHz
50
50
7th
5th
52
55
60
50
40
30
20
10
5 of 14
19
18
17
16
15
41
Gain & Efficiency vs. Output Power
V
Efficiency
DD
= 30 V, I
Gain
43
Power Sweep, CW
45
DQ
Output Power (dBm)
= 1.30 A, ƒ = 2170 MHz
47
PTFB211803EL
49
PTFB211803FL
Rev. 05, 2010-11-10
51
53
55
45
35
25
15