PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 5

RF MOSFET Small Signal RFP-LDMOS 9

PTFB211803EL V1 R250

Manufacturer Part Number
PTFB211803EL V1 R250
Description
RF MOSFET Small Signal RFP-LDMOS 9
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB211803EL V1 R250

Configuration
Single
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-33288-6
Other names
FB211803ELV1R25NT
Confidential, Limited Internal Distribution
Data Sheet
Typical Performance
-20
-30
-40
-50
-60
-70
19
18
17
16
15
14
42
40
– DRAFT ONLY
Gain & Efficiency vs. Output Power
V
DD
Gain
Intermodulation Distortion
ƒ
= 30 V, I
44
Efficiency
1
= 2170 MHz, ƒ
V
Output Power, PEP (dBm)
DD
Power Sweep, CW
vs. Output Power
45
Output Power (dBm)
= 30 V, I
DQ
46
= 1.30 A, ƒ = 2170 MHz
(cont.)
3rd Order
DQ
2
+25°C
+85°C
–10° C
48
= 1.30 A,
= 2169 MHz
50
50
7th
5th
52
55
60
50
40
30
20
10
5 of 14
19
18
17
16
15
41
Gain & Efficiency vs. Output Power
V
Efficiency
DD
= 30 V, I
Gain
43
Power Sweep, CW
45
DQ
Output Power (dBm)
= 1.30 A, ƒ = 2170 MHz
47
PTFB211803EL
49
PTFB211803FL
Rev. 05, 2010-11-10
51
53
55
45
35
25
15

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