NE3210S01-T1B CEL, NE3210S01-T1B Datasheet - Page 5
NE3210S01-T1B
Manufacturer Part Number
NE3210S01-T1B
Description
RF GaAs Super Lo Noise HJFET
Manufacturer
CEL
Datasheet
1.NE3210S01-T1B.pdf
(7 pages)
Specifications of NE3210S01-T1B
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3210S01-T1B
Manufacturer:
RENESAS
Quantity:
41 000
Part Number:
NE3210S01-T1B
Manufacturer:
NEC
Quantity:
20 000
TYPICAL SCATTERING PARAMETERS
Note:
1. Gain Calculation:
NE3210S01
V
D
MAG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY
= 2 V, I
GHz
10.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
25.00
26.00
26.50
11.00
0.10
0.20
0.30
0.40
0.50
0.70
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
|S
|S
-j10
0
21
12
j10
D
|
|
= 10 mA
(
K ±
10
-j25
j25
1.000
1.000
1.000
0.999
0.996
0.993
0.989
0.980
0.967
0.951
0.931
0.908
0.882
0.825
0.766
0.694
0.582
0.488
0.407
0.394
0.391
0.406
0.441
0.507
0.578
0.652
0.718
0.761
0.790
0.812
0.841
0.857
0.851
0.856
0.849
0.843
MAG
K - 1
25
2
S
).
50
11
j50
-j50
When K £ 1, MAG is undefined and MSG values are used. MSG =
-135.11
-158.15
-116.40
100
173.89
144.90
101.09
ANG
119.35
-16.80
-22.91
-29.06
-35.15
-41.09
-46.86
-58.15
-68.97
-82.82
-97.90
-11.19
86.36
74.71
64.03
54.95
48.81
45.64
41.18
36.68
32.71
27.01
26.42
26.81
-1.27
-2.34
-3.43
-4.65
-5.48
-7.58
S
26.5 GHz
22
S
0.1 GHz
22
j100
-j100
S
26.5 GHz
11
4.899
4.887
4.884
4.886
4.814
4.812
4.806
4.787
4.785
4.770
4.754
4.713
4.663
4.565
4.529
4.537
4.418
4.301
4.109
4.111
3.994
3.761
3.455
3.183
2.934
2.701
2.400
2.110
1.857
1.679
1.540
1.418
1.291
1.229
1.202
1.180
MAG
S
0.1 GHz
0
11
S
21
-102.29
-121.28
-129.13
-136.41
-141.30
-112.28
178.46
177.42
176.29
174.90
172.98
170.21
166.08
159.23
152.33
145.49
138.61
131.78
125.12
100.03
112.41
ANG
-12.50
-25.26
-37.87
-51.30
-64.66
-75.90
-85.48
-93.42
Coordinates in Ohms
86.54
71.98
57.78
45.24
31.91
16.52
1.58
V
(T
Frequency in GHz
D
A
=
= 25°C)
2 V, I
D
0.001
0.003
0.004
0.005
0.006
0.009
0.013
0.019
0.025
0.031
0.037
0.042
0.047
0.055
0.061
0.070
0.074
0.079
0.080
0.091
0.102
0.108
0.109
0.111
0.109
0.110
0.108
0.105
0.100
0.100
0.100
0.098
0.095
0.092
0.094
0.093
MAG
= 10 mA
S
12
ANG
-14.99
-21.27
-26.89
-32.42
-39.12
-44.73
-48.33
-50.92
-56.31
-62.75
-67.41
-71.40
-72.43
-74.92
88.31
87.85
88.67
86.60
85.34
84.29
81.96
78.12
74.21
70.41
65.91
61.37
56.77
48.65
42.30
34.76
24.44
16.93
12.32
-7.33
9.33
1.30
180˚
-150˚
|S
|S
150˚
21
12
S
0.1 GHz
|
|
21
, K = 1 + | D | - |S
-120˚
120˚
0.654
0.653
0.653
0.654
0.658
0.657
0.654
0.647
0.638
0.628
0.614
0.599
0.583
0.549
0.515
0.463
0.380
0.314
0.261
0.230
0.173
0.132
0.151
0.208
0.269
0.352
0.440
0.517
0.564
0.597
0.640
0.675
0.702
0.706
0.688
0.694
S
26.5 GHz
MAG
21
S
2 |S
22
-90˚
2
90˚
-102.84
-129.97
-172.68
140.72
114.68
-13.65
-17.91
-22.27
-26.72
-31.08
-35.15
-42.36
-49.21
-57.82
-66.37
-77.56
-85.89
12
S
26.5 GHz
ANG
98.87
87.44
76.72
69.92
64.15
59.30
55.17
50.52
46.98
46.39
40.12
34.43
-0.82
-2.00
-3.07
-3.96
-4.64
-6.56
-9.07
12
S
11
21
| - |S
2
|
-60˚
60˚
22
|
S
0.1 GHz
2
12
,
-0.03
-0.01
-0.01
-30˚
30˚
0.04
0.10
0.13
0.16
0.19
0.25
0.30
0.36
0.43
0.50
0.64
0.75
0.84
1.06
1.18
1.33
1.21
1.15
1.16
1.21
1.20
1.18
1.09
1.02
0.97
0.96
0.91
0.77
0.67
0.65
0.61
0.65
0.66
D = S
K
0˚
11
S
22
- S
36.47
32.67
31.02
29.78
28.83
27.34
25.79
24.05
22.83
21.88
21.12
20.49
19.99
19.22
18.73
18.10
16.21
14.77
13.66
13.79
13.56
12.97
12.22
12.09
12.66
13.03
12.68
12.25
11.89
11.74
11.86
11.60
11.32
11.24
11.05
11.04
MAG
(dB)
21
S
12
1