NE688M03-T1-A NEC, NE688M03-T1-A Datasheet

NE688M03-T1-A

Manufacturer Part Number

NE688M03-T1-A

Description

RF Bipolar Small Signal NPN Low Noise

Manufacturer

NEC

Datasheet

1.NE688M03-T1-A.pdf (3 pages)

Specifications of NE688M03-T1-A

Mounting Style

SMD/SMT

Configuration

Single

Package / Case

M03

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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The NE688M03 transistor is designed for low cost amplifier

and oscillator applications. Low noise figure, high gain and high

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M03" package

is ideal for today's portable wireless applications. The NE688

is also available in chip and six different low cost plastic surface

mount package styles.

ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

Notes:

• NEW M03 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

• HIGH COLLECTOR CURRENT:

SYMBOLS

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

NF = 1.7 dB at 2 GHz

CMAX

= 9.5 GHz

CBO

EBO

21E

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

FE 2

RE 3

= 100 mA

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

PARAMETERS AND CONDITIONS

= 3 V, I

= 1 V, I

EIAJ

NPN SILICON TRANSISTOR

= 3 V, I

= 1 V, I

PRELIMINARY DATA SHEET

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 1 V, I

= 7 mA, f = 2 GHz

= 3 V, I

= 3 mA, f = 2 GHz

= 1 V, I

= 5 V, I

= 20 mA, f = 2 GHz

= 3 mA, f = 2 GHz

= 20 mA, f = 2 GHz

= 25°C)

= 3 mA

= 0

= 0, f = 1 MHz

= 0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

OUTLINE DIMENSIONS

1.4 ±0.1

(0.9)

0.59±0.05

California Eastern Laboratories

0.45

UNITS

0.2±0.1

GHz

µA

PACKAGE OUTLINE M03

1.2±0.05

0.8±0.1

MIN

NE688M03

(Units in mm)

NE688M03

2SC5437

M03

TYP

9.5

1.9

1.7

0.7

0.3±0.1

0.15

-0.05

+0.1

MAX

145

2.5

0.1

0.8

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NE688M03-T1-A Summary of contents

Page 1

... I = 100 mA CMAX DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles ...

Page 2

NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR 3.5 ...

Page 3

... DATA SUBJECT TO CHANGE WITHOUT NOTICE 25°C) A UNITS RATINGS 100 mW 125 °C 150 °C -65 to +150 (T = 25°C) A 200 A 180 A 160 A 140 A 120 A 100 ( (V) BE NE688M03 D.C. CURRENT GAIN vs. COLECTOR CURRENT 200 100 0 0.1 0.2 0 Collector Current, I (mA) C Internet: http://WWW.CEL.COM 100 06/10/2002 ...

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