PTFB192503FL V1 Infineon Technologies, PTFB192503FL V1 Datasheet - Page 6

• Manufacturer Part Number: PTFB192503FL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503FL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-34288-2
• Other names: FB192503FLV1NP

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
See next page for reference circuit information
Data Sheet
MHz
1900
1930
1960
1990
2020
Z Source
2.63
2.56
2.48
2.42
2.35
R
Z Source W
G
–3.92
–3.67
–3.44
–3.21
–2.98
jX
D
S
Z Load
1.36
1.33
1.31
1.28
1.26
R
Z Load W
6 of 15
–4.49
–4.35
–4.21
–4.07
–3.93
jX
Z Load
2020 MHz
Z Source
PTFB192503EL
PTFB192503FL
1900 MHz
Rev. 09, 2010-11-09
Z
0
= 50 W