NE334S01 NEC, NE334S01 Datasheet - Page 2

• Manufacturer Part Number: NE334S01
• Description: RF GaAs Low Noise HJ FET
• Manufacturer: NEC

Specifications of NE334S01

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 85 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 80 mA
• Power Dissipation: 300 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these conditions may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
T
V
V
T
I
P
STG
DS
CH
DS
GS
T
500
100
400
300
200
100
60
20
80
40
0
0
-2.0
TOTAL POWER DISSIPATION vs.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Channel Temperature
Storage Temperature
Total Power Dissipation
Gate to Source Voltage, V
GATE TO SOURCE VOLTAGE
Ambient Temperature, T
AMBIENT TEMPERATURE
PARAMETERS
50
DRAIN CURRENT vs.
100
-1.0
150
A
UNITS
V
GS
200
DS
mW
mA
( C)
V
V
C
C
= 2 V
(V)
1
250
-65 to +125
0
(T
RATINGS
A
I
-3.0
125
300
= 25 C)
4.0
DSS
(T
A
= 25 C)
TYPICAL NOISE PARAMETERS
V
TYPICAL CONSTANT NOISE FIGURE
CIRCLE
DS
FREQ.
(GHz)
= 2 V, I
10
12
14
16
18
2
4
6
8
0
DS
-0.5
100
(V
80
60
40
20
0.5
= 15 mA
0
DS
NF
(dB)
0.23
0.25
0.28
0.31
0.38
0.48
0.60
0.73
0.88
= 2 V, I
MIN
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
1
DRAIN CURRENT vs.
DS
(dB)
17.0
16.0
14.7
13.6
12.5
11.5
10.5
G
9.6
8.8
= 15 mA, f = 4 GHz)
A
-1.0
2
1.0
0.8 dB
MAG
0.77
0.58
0.43
0.32
0.27
0.27
0.34
0.48
0.69
0.6 dB
opt
0.4 dB
3
OPT
-2.0
DS
ANG
4
-139
-100
127
175
V
-70
-56
-0.2 V
15
43
82
-0.4 V
-0.6 V
2.0
GS
(V)
= 0 V
(T
A
5
= 25 C)
Rn/50
0.19
0.18
0.13
0.08
0.07
0.10
0.17
0.29
0.46