NE722S01-T1 CEL, NE722S01-T1 Datasheet - Page 6

• Manufacturer Part Number: NE722S01-T1
• Description: RF GaAs C-X Band GaAs MESFET
• Manufacturer: CEL

Specifications of NE722S01-T1

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.045 S
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 250 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NONLINEAR MODEL
SCHEMATIC
FET NONLINEAR MODEL PARAMETERS
(1) ADS TOM Model
(2) To simulate phase noise using AF/KF: AF = 1.5
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
TQGAMMAAC
Parameters
TQGAMMA
TQDELTA
DELTA1
DELTA2
VTOSC
ALPHA
BETA
CGD
CDS
RDB
VTO
TAU
CBS
VBR
CGS
RIS
VBI
RID
FC
IS
Q
N
0.19e-12
0.92e-12
0.05e-12
Infinity
1e-14
3e-12
0.055
-2.24
0.04
0.05
0.25
1e-9
250
Q1
1.5
1.3
0.3
0.3
0.5
0
8
1
0
0
Parameters
BETATCE
RGMET
VTOTC
TNOM
FNC
FFE
GATE
RG
XTI
RD
RS
EG
R
P
C
(2)
150e-6
1.43
CGS_PKG
1 ohms
Q1
0.5
0.5
0.9
0.08pF
27
KF = 2e-10
8
6
0
3
0
0
1
1
Rgx
CGD_PKG
0.001pF
0.71nH
Lgx
(1)
Q1
0.13nH
Rsx
0.01 ohms
Lsx
SOURCE
0.5nH
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Ldx
1 ohms
time
capacitance
inductance
resistance
voltage
current
Parameter
Rdx
0.1 to 18 GHz
V
02/2002
DS
= 2 V to 4 V, I
CDS_PKG
0.1PF
DRAIN
D
seconds
farads
henries
ohms
volts
amps
Units
= 10 mA to 40 mA
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
07/01/2004