NE32584C-S NEC, NE32584C-S Datasheet - Page 2

• Manufacturer Part Number: NE32584C-S
• Description: RF GaAs 84C LO NO HJ FET
• Manufacturer: NEC

Specifications of NE32584C-S

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 60 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 60 mA
• Power Dissipation: 165 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
SYMBOLS
T
V
I
V
T
I
GRF
P
STG
DS
GS
CH
DS
T
100
200
150
50
1.0
0.5
0
0
NOISE FIGURE AND ASSOCIATED GAIN
1
TOTAL POWER DISSIPATION vs.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Total Power Dissipation
Ambient Temperature, T
AMBIENT TEMPERATURE
PARAMETERS
2
50
NF
Frequency, f (GHz)
vs. FREQUENCY
G
A
4
100
6
8 10
150
V
I
D
A
UNITS
DS
= 10 mA
14
mW
( C)
mA
= 2 V
V
V
C
C
A
20
1
-65 to +150
200
RATINGS
(T
30
16
12
8
4
A
24
20
I
-3.0
100
150
165
4.0
DSS
(T
= 25 C)
A
= 25 C)
TYPICAL NOISE PARAMETERS
V
DS
FREQ.
(GHz)
10
12
14
16
18
= 2 V, I
2
4
6
8
100
2.0
1.5
1.0
0.5
80
60
40
20
NOISE FIGURE AND ASSOCIATED GAIN
0
0
D
V
f = 12 GHz
= 10 mA
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
NF
(dB)
0.29
0.30
0.33
0.36
0.40
0.45
0.54
0.68
0.85
= 2 V
OPT
DRAIN CURRENT vs.
vs. DRAIN CURRENT
Drain Current, I
10
(dB)
20.0
18.3
16.5
15.0
13.6
12.5
12.0
11.8
11.5
G
A
1.5
MAG
0.86
0.76
0.69
0.63
0.59
0.54
0.48
0.40
0.31
D
20
(mA)
NF
G
OPT
A
DS
V
GS
(V)
-0.2 V
-0.6 V
-0.4 V
-0.8 V
ANG
-165
-144
= 0 V
122
147
171
22
45
70
96
3.0
30
(T
12
14
13
11
10
A
Rn/50
= 25 C)
0.27
0.25
0.18
0.11
0.08
0.04
0.04
0.05
0.06