UPA811T NEC, UPA811T Datasheet

UPA811T

Manufacturer Part Number

UPA811T

Description

RF Bipolar Small Signal NPN High Frequency

Manufacturer

NEC

Datasheet

1.UPA811T-T1-A.pdf (4 pages)

Specifications of UPA811T

Configuration

Single

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 4
Download datasheet (157Kb)

NEC's UPA811T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

suited for pager and other hand-held wireless applications.

ELECTRICAL CHARACTERISTICS

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• EXCELLENT LOW VOLTAGE, LOW CURRENT

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

FEATURES

Note:

1. Operation in excess of any one of these parameters may result

Notes:

1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA811T-T1, 3K per reel.

SYMBOLS

, low voltage bias and small size make this device ideally

in permanent damage.

2 NE680 Die in a 2 mm x 1.25 mm package

NF = 1.9 dB TYP at 2 GHz

PERFORMANCE

Cre

CBO

EBO

21E

CBO

CEO

EBO

STG

FE 1

= 7.5 dB TYP at 2 GHz

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

PARAMETERS

1 Die

2 Die

PARAMETERS AND CONDITIONS

PACKAGE OUTLINE

PART NUMBER

= 3 V, I

UNITS

FREQUENCY TRANSISTOR

= 3 V, I

= 5 mA, f = 2 GHz

= 1 V, I

= 3 V, I

°C

= 10 V, I

= 5 mA

= 5 mA, f = 2 GHz

= 0

= 5 mA

-65 to +150

= 0, f = 1 MHz

RATINGS

= 0

= 25°C)

110

200

150

1.5

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

OUTLINE DIMENSIONS

PIN OUT

1. Collector Transistor 1

2. Base Transistor 2

3. Collector Transistor 2

4. Emitter Transistor 2

5. Emitter Transistor 1

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

2.0 ± 0.2

0.9 ± 0.1

California Eastern Laboratories

1.3

MIN

5.5

0.7

0.65

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

UPA811T

0 ~ 0.1

TYP

S06

120

8.0

0.3

7.5

1.9

(Units in mm)

UPA811T

0.2 (All Leads)

0.15

+0.10

- 0.05

MAX

200

1.0

0.7

3.2

Related parts for UPA811T

UPA811T Summary of contents

Page 1

... Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS ...

Page 2

... UPA811T TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 0 50 100 Ambient Temperature, T COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 Base to Emitter Voltage, V FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5 MHz 2.0 1.0 0.5 0.2 0 Collector to Base Voltage 25°C) A Free Air 150 (° ...

Page 3

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE (T = 25° (mA GHz 50 PACKAGING Tape & Reel RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS UPA811T INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 0.5 1 ...

Page 4

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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