NE68519 NEC, NE68519 Datasheet

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NE68519

Manufacturer Part Number
NE68519
Description
RF Bipolar Small Signal USE 551-NE68519-A
Manufacturer
NEC
Datasheet
1.NE68519-T1-A.pdf (18 pages)

Specifications of NE68519

Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE68519
Manufacturer:
TOS
Quantity:
2 800
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE68519-A
Manufacturer:
CEL
Quantity:
135
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE68519-T1-A
Manufacturer:
CEL
Quantity:
50 937
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE68519-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
NEC's family of high frequency, low cost, surface mount
devices are well suited for portable wireless communications
and cellular radio applications.
The NE685 series of high f
very low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: f
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
R
|S
NF
MAG
C
TH(J-C)
G
I
I
TH(J-A)
h
CBO
EBO
P
21E
f
RE 4
FE
T
NF
MIN
T
|
SILICON HIGH FREQUENCY TRANSISTOR
2
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350 μs, duty cycle ≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Associated Gain at
V
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
Maximum Available Gain at
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 3V, I
= 3 V, I
= 3V, I
= 3 V, I
= 3V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 1 V, I
PACKAGE OUTLINE
2
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
E
= 10 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
=10 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 10 mA, f = 2.0 GHz
= 10 mA
= 0 mA, f = 1 MHz
E
C
= 0 mA
= 0 mA
T
(12 GHz) devices is suitable for
3
at
NEC'S SURFACE MOUNT NPN
1
T
of 12 GHz
°C/W
GHz
mW
dB
dB
dB
dB
μA
μA
pF
(T
A
= 25°C)
75 110 150
9
NE68518
2SC5015
1.5
0.3
8.5
18
12
11
12
150
833
200
2.5
0.1
0.1
0.5
75
7
NE68519
2SC5010
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
110 150
1.5
7.5
0.4
19
12
11
9
1000
125
200
2.5
0.1
0.1
0.7
California Eastern Laboratories
75
7
NE68530
2SC4959
110 150
1.5
8.5
0.4
30
12
10
7
150
833
200
2.5
0.1
0.1
0.7
19 (3 PIN ULTRA SUPER
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
75
7
NE68533
2SC4955
NE685
SERIES
10.5
110 150
1.5
0.4
MINI MOLD)
33
12
7
8
180
620
200
2.5
0.1
0.1
0.7
NE68539/39R
75
9
2SC4957
110 150
1.5
7.5
0.3
39
12
11
10
180
620
200
2.5
0.1
0.1
0.5

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NE68519 Summary of contents

Page 1

... Pulsed measurement, PW≤350 μs, duty cycle ≤2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge GHz T 18 (SOT 343 STYLE) 30 (SOT 323 STYLE) 39 (SOT 143 STYLE 25°C) A NE68518 NE68519 2SC5015 2SC5010 18 19 GHz 1.5 2.5 1.5 2 ...

Page 2

... NE68519 TYPICAL NOISE PARAMETERS FREQ OPT A (MHz) (dB) (dB) MAG 500 1.07 12.6 0.80 800 1.25 8.6 ...

Page 3

NE68533 TYPICAL NOISE PARAMETERS FREQ Γ OPT A (MHz) (dB) (dB) MAG 500 0.9 12.03 0.76 800 1.1 10.22 0.72 1000 1.3 9.24 0.67 V 1.0 V ...

Page 4

... NOISE FIGURE vs. COLLECTOR CURRENT GHz Collector Current (TA = 25°C) 114 150 (C°) A 114 150 (° (mA) NE68519 D.C. POWER DERATING CURVE 200 180 INFINITE 150 HEAT SINK 125 100 FREE AIR 114 0 100 150 Ambient Temperature, T (C°) A INSERTION GAIN vs. COLLECTOR CURRENT GHz ...

Page 5

TYPICAL SCATTERING PARAMETERS GHz . 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68518 0.5 mA ...

Page 6

... NE685 SERIES TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68519 FREQUENCY S 11 GHz MAG ANG 0.1 0.983 -7.500 0.4 0.944 -31.700 0.8 0.838 -59.400 1.0 0.779 -71.400 1.5 0.646 -98.900 2.0 0.531 -123.400 2.5 0.438 -149.700 3.0 0.371 178 ...

Page 7

TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68530 0.5 mA ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz 1 -.2 4 GHz -.4 -.6 -1.5 NE68533 -. 0 0.5 mA ...

Page 9

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -.8 -1 NE68539 0.5 mA ...

Page 10

NE68518 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 VTF VAR ...

Page 11

... NE68519 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7.0e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.90e- 2. XTF NR 1.08 VTF VAR 12.4 ITF IKR Infinity PTF ISC 1.3 XTB RB 10 XTI RBM 8.34 KF IRB ...

Page 12

NE685 SERIES NE68530 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 ...

Page 13

NE68533 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 VTF VAR ...

Page 14

NE685 SERIES NE68539 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 ...

Page 15

... Emitter +0.10 0.15 -0.05 +0.10 0.3 -0.05 LEAD 3 ONLY LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector +0.1 0.15 -0.05 +0.1 0.3 -0.05 (ALL LEADS) LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector +0.10 0.15 -0.05 OUTLINE 18 RECOMMENDED P.C.B. LAYOUT 0 0.6 1. 1.7 OUTLINE 19 RECOMMENDED P.C.B. LAYOUT 1.3 ...

Page 16

... Base 3. Collector +0.10 0.16 -0.06 +0.10 0.4 -0.05 (LEADS 1.9 LEAD CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter 0.16 +0.10 -0.06 5˚ LEAD CONNECTIONS 1. Emitter 3 2. Collector 1.8 3. Emitter 4. Base 4 +0.10 0.4 -0.05 (LEADS 0.16 +0.10 -0.06 5˚ OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2 1.9 ...

Page 17

... ORDERING INFORMATION PART NUMBER QUANTITY NE68518-T1-A 3000 NE68519-T1-A 3000 NE68530-T1-A 3000 NE68533-T1-A 3000 NE68539-T1-A 3000 NE68539R-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

Page 18

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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