NESG2101M05-T1 CEL, NESG2101M05-T1 Datasheet - Page 8

• Manufacturer Part Number: NESG2101M05-T1
• Description: RF Germanium NPN SiGe High Freq
• Manufacturer: CEL

Specifications of NESG2101M05-T1

• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Package / Case: M05
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
OUTPUT POWER, POWER GAIN, COLLECTOR CUR-
25
20
15
10
-5
5
0
-10
5
4
3
2
1
0
4
3
2
1
0
1
1
V
I
cq
V
f = 1 GHz
V
f = 2 GHz
CE
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
CE
G
RENT, COLLECTOR EFFICIENCY
= 10 mA
P
= 3.6 V, f = 5.2 GHz
= 2 V
= 2 V
-5
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
vs. INPUT POWER
Input Power, P
0
P
out
10
10
5
I
C
NF
G
NF
G
η
a
a
C
in
10
(dBm)
C
C
(mA)
(mA)
15
100
20
100
120
100
80
60
40
20
0
20
15
10
5
0
25
20
15
10
5
0
(T
A
= 25°C)
5
4
3
2
1
0
4
3
2
1
0
4
3
2
1
0
1
1
1
V
f = 1 GHz
V
f = 3 GHz
NOISE FIGURE, ASSOCIATED GAIN
V
f = 2 GHz
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
CE
CE
= 1 V
= 1 V
= 1 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
NF
G
NF
G
NF
G
a
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
25
20
15
10
5
0
20
15
10
5
0
20
15
10
5
0