AGR09130EF TriQuint, AGR09130EF Datasheet - Page 8

• Manufacturer Part Number: AGR09130EF
• Description: RF MOSFET Power RF Transistor
• Manufacturer: TriQuint

Specifications of AGR09130EF

• Minimum Operating Temperature: - 65 C
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
F1 = 940.0 MHz, F2 = 940.1 MHz, V
0.00
0.00
IM5+/-
Figure 10. 2-Tone IMD vs. Po
50.00
POWER OUT (P
(continued)
IM3+/-
100.00
DD
IM7+/-
= 26 V, I
OUT
)
WPEPZ
DQ
= 1.0 A, T
150.00
F
= 30 °C.
200.00