NE6510179A-EVPW19 CEL, NE6510179A-EVPW19 Datasheet - Page 9

• Manufacturer Part Number: NE6510179A-EVPW19
• Description: RF GaAs For NE6510179A-A Power at 1.9 GHz
• Manufacturer: CEL

Specifications of NE6510179A-EVPW19

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NONLINEAR MODEL
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
SCHEMATIC
FET NONLINEAR MODEL PARAMETERS
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
(3) CGSO
(4) CGDO
Parameters
GAMMADC
GAMMA
CGDO
DELTA1
DELTA2
VTOSC
ALPHA
CGSO
DELTA
BETA
VTO
CDS
RDB
CBS
VBR
TAU
VBI
RIS
RID
FC
IS
Q
N
(4)
(3)
(2)
0.5e-12
10e-12
20e-12
-0.756
Infinity
1e-16
4e-12
2.245
0.001
0.01
Q1
1.7
0.6
0.3
0.2
0.5
0
2
0
0
1
0
0
0
Parameters
BETATCE
RGMET
VTOTC
TNOM
FFE
RG
XTI
RD
RS
EG
KF
AF
GATE
0.001 nH
GAMMA
CGS
CGD
LGX
0.001
0.001
0.05
1.43
CGS PKG
0.1 pF
Q1
0.75 nH
27
0
0
1
3
0
0
1
LG
Q1
(1)
RSX
0.05 ohms
LSX
0.001 nH
SOURCE
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
0.2 ohms
RDBX
400 ohms
CBSX
100 pF
RDX
capacitance
inductance
resistance
Parameter
0.65 nH
LD
0.5 to 4 GHz
V
3/29/2000
DS
0.01 nH
= 2.2 V to 5 V, I
CDS PKG
0.1 pF
LDX
DRAIN
picofarads
nanohenries
ohms
Units
D
= 150 mA to 300 mA
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
11/04/2002