NE6501077 CEL, NE6501077 Datasheet
NE6501077
Manufacturer Part Number
NE6501077
Description
RF GaAs L&S Band GaAs MESFET
Manufacturer
CEL
Datasheet
1.NE6501077.pdf
(2 pages)
Specifications of NE6501077
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
2.6 S
Gate-source Breakdown Voltage
- 12 V
Continuous Drain Current
9 A
Power Dissipation
50 W
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
• HIGH OUTPUT POWER: 10 W
• HIGH LINEAR GAIN: 10.5 dB
• HIGH EFFICIENCY: 40%
• INDUSTRY STANDARD PACKAGING
RECOMMENDED OPERATING LIMITS
ELECTRICAL CHARACTERISTICS
The NE6501077 is a medium power GaAs MESFET designed
for up to a 10 W output stage or as a driver for high power
devices. The device has no internal matching and can be used
from UHF frequencies up to 3.0 GHz. The chips used in this
series offer superior reliability and consistent performance for
which NEC microwave semiconductors are known.
The NE6501077 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
DESCRIPTION
SYMBOLS
G
V
T
COMP
R
CH
DS
G
SYMBOLS
L/S BAND MEDIUM POWER GaAs MESFET NE6501077
P
I
R
I
G
DSS
V
g
OUT
ADD
DS
TH
m
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
P
L
PARAMETERS
Power Out at Fixed Input Power
Linear Gain
Power Added Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
CHARACTERISTICS
PACKAGE OUTLINE
PART NUMBER
UNITS MIN
dB
V
C
TYP MAX
(T
10
C
= 25 C)
130
100
3.0
10
UNITS
dBm
mS
C/W
dB
%
A
A
V
OUTLINE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
(T
SYMBOLS
C
V
V
V
T
= 25 C unless otherwise noted)
I
T
I
P
GDX
GSX
STG
DSX
GS
DS
CH
T
39.0
MIN
-3.5
9.5
2.0
2.26 0.4
California Eastern Laboratories
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
2.5
NE6501077
0.2 MAX
R1.25, 2 PLACES
0.1
2600
TYP
39.5
10.5
-2.0
2.0
4.5
2.5
77
40
PARAMETERS
+0.06
PACKAGE OUTLINE 77
-0.02
SOURCE
MAX
17.5 0.5
-0.5
8.9 0.4
7.0
3.0
14.3
DRAIN
GATE
1.0
(Units in mm)
0.1
V
V
V
DS
V
TEST CONDITIONS
UNITS
DS
DS
DS
Channel to Case
mA
= 2.5 V; I
W
P
V
V
V
A
C
C
= 2.5 V; V
= 10 V; I
= 2.5 V; I
IN
6.35 0.4
f = 2.3 GHz
R
4.0 MIN BOTH
1.0
= 31.0 dBm
G
LEADS
= 100
3.8 MAX
-65 to +175
RATINGS
DS
DSQ
DS
GS
175
-18
-12
9.0
15
50
50
= 15 mA
= 2 A
= 0 V
= 1A
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NE6501077 Summary of contents
Page 1
... HIGH EFFICIENCY: 40% • INDUSTRY STANDARD PACKAGING DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for output stage driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known ...
Page 2
... EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ...