BLF6G38LS-100 NXP Semiconductors, BLF6G38LS-100 Datasheet

RF MOSFET Small Signal LDMOS TNS

BLF6G38LS-100

Manufacturer Part Number
BLF6G38LS-100
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38LS-100

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
34 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38LS-100,112

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G38LS-100
Manufacturer:
NXP
Quantity:
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Part Number:
BLF6G38LS-100
Manufacturer:
NXP
Quantity:
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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
[3]
Mode of operation
1-carrier N-CDMA
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 2 — 24 October 2011
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Qualified up to a maximum V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
P
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
L(M)
stands for peak output power.
Typical performance
[2]
f
(MHz)
3400 to 3600 28
case
= 25
DS
V
(V)
C in a class-AB production test circuit.
operation of 32 V
DS
P
(W)
18.5
L(AV)
P
(W)
130
L(M)
[1]
Dq
of 1050 mA:
G
(dB) (%)
13
p
21.5 47.5
D
ACPR
(dBc)
Product data sheet
[3]
885k
ACPR
(dBc)
65
[3]
1980k

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BLF6G38LS-100 Summary of contents

Page 1

... BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical RF performance at T Mode of operation 1-carrier N-CDMA [1] P L(M) [2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package ...

Page 3

... ACPR adjacent channel power ratio (1980 kHz) 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 Conditions = 80  ...

Page 4

... 1050 mA 3500 MHz Fig 1. EVM as a function of load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 Frame structure 2 symbols  4 subchannels FCH 2 symbols  26 subchannels data 44 symbols  30 subchannels data 001aaj033 G (dB (W) L Fig 2. All information provided in this document is subject to legal disclaimers. ...

Page 5

... G P (dB η 3400 3450 3500 1050 mA; Single Carrier IS-95 PAR = 9 0.01 % probability. Fig 4. Power gain and drain efficiency as function of frequency; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 −25 ACPR (dBc) −35 −45 −55 −65 − 001aaj037 25 η D (%) 3550 3600 f (MHz) Fig 5 ...

Page 6

... 1050 mA; single carrier IS-95 PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 8. Power gain as a function of load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 001aaj041 −35 40 ACPR η D (dBc) (%) −45 30 η D −55 20 −65 ...

Page 7

... C10 L1 R1, R2, R3 Table 10. f (GHz) 3.4 3.5 3.6 BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 BLF6G38-100 Input Rev 2 30RF35 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with  thickness = 0.76 mm. See Table 9 for list of components. ...

Page 8

... UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G38-100_6G38LS-100 v.2 Modifications: BLF6G38-100_6G38LS-100_1 BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 Abbreviations Description Complementary Cumulative Distribution Function Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor ...

Page 11

... BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... For sales office addresses, please send an email to: BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 BLF6G38-100; BLF6G38LS-100 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com WiMAX power LDMOS transistor All rights reserved ...

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