PMBF4391 T/R NXP Semiconductors, PMBF4391 T/R Datasheet - Page 3

• Manufacturer Part Number: PMBF4391 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBF4391 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Breakdown Voltage: 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 150 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBF4391,215

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
T
April 1995
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Gate current (DC)
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient
Gate-source voltage
Gate-source cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source voltage (on)
Drain-source resistance (on)
Drain cut-off current
j
= 25 C unless otherwise specified
N-channel FETs
I
V
V
I
I
I
I
I
V
V
V
V
V
V
V
I
G
D
D
D
D
D
DS
DS
DS
G
= 12 mA; V
= 6 mA; V
= 3 mA; V
= 0; V
= 1 mA; V
= 1 nA; V
GS
GS
GS
GS
GS
GS
= 1 A; V
= 0 V; V
= 0 V; V
= 20 V; V
= 12 V
= 7 V
= 5 V
= 12 V
= 7 V
= 5 V
GS
= 0; f = 1 kHz; T
DS
DS
GS
GS
DS
GS
GS
GS
GS
= 20 V
= 0
= 0
= 0
= 0
= 0
= 20 V
= 20 V; T
= 0
V
V
DS
DS
(1)
= 20 V
= 20 V; T
amb
amb
amb
= 150 C
= 25 C
amb
= 40 C
= 150 C
(1)
I
V
V
V
V
V
r
I
I
I
I
I
I
DSS
DSX
DSX
DSX
DSX
DSX
DSX
ds on
DSon
DSon
DSon
3
(BR)GSS
(P)GS
PMBF4391















 V
V
V
I
P
T
T
R
G
stg
j
DGO
tot
th j-a
GSO
DS
V
I
I
50
150
40
4
10
0.4

30
0.1


0.2


GSon
GSS
GSS
PMBF4391; PMBF4392;



PMBF4392
=
max.
max.
max.
max.
max.
max.
65 to  150 C
25
75
40
2
5

0.4



0.1


0.2

250 mW
150 C
430 K/W
Product specification
40 V
40 V
40 V
50 mA
PMBF4393
1
0.1
0.2
PMBF4393
5
30
40
0.5
3


0.4
100


0.1


0.2
V
nA
A
mA
mA
V
V
V
V
V
V

nA
nA
nA
A
A
A