BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 11

• Manufacturer Part Number: BLF6G38-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-25,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Document ID
BLF6G38-25_BLF6G38S-25_2
Modifications:
BLF6G38-25_BLF6G38S-25_1
Revision history
Table 11.
Acronym
CCDF
CW
ESD
EVM
FCH
FFT
IBW
IS-95
LDMOS
N-CDMA
OFDMA
PAR
PUSC
RF
QAM
QPSK
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
20081223
20080218
•
•
Abbreviations
Changed the maximum drain current and the maximum junction temperature in
Table 4 on page 2
Moved impedance information to
Description
Complementary Cumulative Distribution Function
Continuous Wave
ElectroStatic Discharge
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Narrowband Code Division Multiple Access
Orthogonal Frequency Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Quadrature Amplitude Modulation
Quadrature Phase Shift Keying
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 02 — 23 December 2008
Product data sheet
Preliminary data sheet -
BLF6G38-25; BLF6G38S-25
Section 8
Change notice Supersedes
-
WiMAX power LDMOS transistor
BLF6G38-25_BLF6G38S-25_1
-
© NXP B.V. 2008. All rights reserved.
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