BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 8

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 10. Power gain and drain efficiency as functions of
(dB)
G
p
18
17
16
15
14
13
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
frequency; typical values
DS
= 28 V; I
G
7.6 Single carrier N-CDMA broadband performance at 20 W average
D
p
2550
Dq
= 350 mA; single carrier N-CDMA;
2600
2650
f (MHz)
001aah414
Rev. 03 — 15 December 2008
2700
45
43
41
39
37
35
(%)
D
BLF6G27-45; BLF6G27S-45
Fig 11. Adjacent channel power ratio as function of
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
30
40
50
60
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
frequency; typical values
DS
(1)
(2)
(1)
(2)
(1)
(2)
= 28 V; I
2550
Dq
WiMAX power LDMOS transistor
= 350 mA; single carrier N-CDMA;
2600
2650
ACPR
ACPR
ACPR
© NXP B.V. 2008. All rights reserved.
f (MHz)
001aah415
1500k
1980k
885k
2700
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