BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 10

• Manufacturer Part Number: BLS6G2731S-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731S-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 120W(Typ)
• Power Gain (typ)@vds: 13.5@32VdB
• Frequency (min): 2.7GHz
• Frequency (max): 3.1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 135@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 48%
• Mounting: Surface Mount
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS6G2731S-120,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G2731-120_6G2731S-120_1
Product data sheet
Document ID
BLS6G2731-120_6G2731S-120_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
S-band
VSWR
Abbreviations
BLS6G2731-120; BLS6G2731S-120
Release date
20081114
Rev. 01 — 14 November 2008
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
LDMOS S-band radar power transistor
Change notice
-
© NXP B.V. 2008. All rights reserved.
Supersedes
-
10 of 12