BLS3135-20 TRAY NXP Semiconductors, BLS3135-20 TRAY Datasheet - Page 6

• Manufacturer Part Number: BLS3135-20 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-20 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-20,114

Philips Semiconductors
2000 Feb 01
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = C2 = 4.7 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
30
C2
r
= 2.2), thickness 0.38 mm.
C1
MCD869
40
BLS3135-20
Product specification