BLF4G20LS-110B NXP Semiconductors, BLF4G20LS-110B Datasheet
BLF4G20LS-110B
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BLF4G20LS-110B Summary of contents
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... BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1930 MHz to 1990 MHz; T production test circuit; typical values Mode of operation ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter Conditions thermal resistance from T junction to case Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor Simplified outline Symbol 1 3 [1] 2 Min - 0 Min Typ ...
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... D ACPR 400 ACPR 600 EVM rms EVM M 7.1 Ruggedness in class-AB operation The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 650 mA 9397 750 14548 Product data sheet Characteristics drain-source breakdown voltage V gate-source threshold voltage gate-source quiescent voltage ...
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... C; case Fig 2. Two-tone CW power gain and drain efficiency 001aac389 IMD3 (dBc) IMD3 IMD5 IMD7 60 80 100 P (W) L(AV case (1) I (2) I (3) I (4) I Fig 4. Third order intermodulation distortion as a Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor 650 mA case f = 1990 MHz as functions of average load power ...
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... Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as 001aac393 ACPR (dBc) EVM M EVM rms (W) L(AV case Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor 50 60 ACPR 400 70 ACPR 600 650 mA ...
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... The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with = 3.5 and thickness = 0.76 mm. r See Table 8 for list of components. Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor V DD C11 C8 C9 C10 output 001aad664 C11 V ...
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... Philips electrolytic capacitor Philips chip resistor hand made wire Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor 10). Value Dimensions Catalogue number 0 0.5 pF 8 1812X7R105KL2AB 220 5.6 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Enhanced Data rates for GSM Evolution Error Vector Magnitude Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Radio Frequency Voltage Standing Wave Ratio Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Philips Semiconductors 11. Revision history Table 10: Revision history Document ID Release date BLF4G20LS-110B_1 20060110 9397 750 14548 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor Doc. number Supersedes 9397 750 14548 - © ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 10 January 2006 BLF4G20LS-110B UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 11 BLF4G20LS-110B UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...