START450TR STMicroelectronics, START450TR Datasheet - Page 2

• Manufacturer Part Number: START450TR
• Description: RF Bipolar Small Signal NPN High Frequency
• Manufacturer: STMicroelectronics

Specifications of START450TR

• Dc Collector/base Gain Hfe Min: 160
• Dc Current Gain Hfe Max: 160
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-323-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

START450
ELECTRICAL CHARACTERISTICS (T
Note(1): Gms = | S
2/7
PINOUT
Symbol
Gms
NFmin
|S21|
P
OIP3
I
I
Hfe
Ga
cbo
ebo
-1dB
(1)
2
4
SOT343
1
Collector cutoff current
NFmin associated gain
1dB compression point
Maximum stable gain
21
Minimim noise figure
Insertion power gain
Emitter-base cutoff
Ouput third order
/ S
DC current gain
intercept point
12
Parameter
|
current
3
2
Top view
Ic = 10mA, Vce = 2V, f = 1.8GHz,
Ic = 10mA, Vce = 2V, f = 1.8GHz
Ic = 50mA, Vce = 2V, f = 1.8GHz
Ic = 50mA, Vce = 2V, f = 1.8GHz
Ic = 50mA,Vce = 3V, f = 1.8GHz
Ic = 50mA,Vce = 3V, f = 1.8GHz
j
=25
Ic = 50mA, Vce = 4V
o
Veb = 1.5V, Ic = 0A
Vcb = 5V, Ie = 0A
Test Conditions
C,unless otherwise specified)
Z
s
= Z
s
opt
PIN CONNECTION
Pin No.
2,4
1
3
COLLECTOR
Description
Min.
EMITTER
BASE
Typ.
13.7
19.1
160
1.2
29
13
19
Max.
150
15
Unit
dBm
dBm
nA
dB
dB
dB
dB
A