DSA30C60PB IXYS, DSA30C60PB Datasheet
DSA30C60PB
Manufacturer Part Number
DSA30C60PB
Description
DIODE SCHOTTKY 60V 2X15A TO220AB
Manufacturer
IXYS
Datasheet
1.DSA30C60PB.pdf
(2 pages)
Specifications of DSA30C60PB
Voltage - Forward (vf) (max) @ If
850mV @ 15A
Current - Reverse Leakage @ Vr
500µA @ 60V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Vrrm, (v)
60
Ifavm, D = 0.5, Total, (a)
30
Ifavm, D = 0.5, Per Diode, (a)
15
@ Tc, (°c)
150
Vf, Max, Tvj =125°c, (v)
0.70
@ If, (a)
15
Tvjm, (°c)
175
Rthjc, Max, (k/w)
1.75
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSA30C60PB
Manufacturer:
IXYS
Quantity:
18 000
Schottky
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA 30 C 60PB
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
● Low noise switching
● Low losses
Symbol
V
I
V
I
V
r
R
T
P
I
C
E
I
IXYS reserves the right to change limits, conditions and dimensi
© 2006 IXYS all rights reserved
Features / Advantages:
R
FSM
AR
FAV
F0
F
RRM
F
VJ
tot
AS
protection circuits
J
thJC
thermal resistance junction to case
virtual junction temperature
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repetitive avalanche current
for power loss calculation only
Data according to IEC 60747and per diode unless otherwise specified
Conditions
V
V
I
I
I
I
rectangular, d = 0.5
t
V
I
V
F
F
F
F
p
AS
R
R
R
A
Applications:
● Rectifiers in switch mode power
● Free wheeling diode in low voltage
=
=
= 10
=
=
=
=
=
=
=
supplies (SMPS)
converters
1.5·V
tbd
60
60
15
30
15
30
1
ms (50 Hz), sine
V; f = 1 MHz
V
V
A
A
A
A
A; L =
R
typ.;
f = 10 kHz
100
µH
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
C
VJ
VJ
= 175 °C
= 25
=
=
=
=
= 150 °C
=
= 45 °C
=
=
125
125
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
V
I
V
Package:
TO-220AB
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
FAV
min.
RRM
F
DSA 30 C 60PB
-55
R a t i n g s
=
=
=
typ.
2x
tbd
0.68
Backside: cathode
60
15
max.
0.85
0.95
0.68
0.78
0.44
11.2
1.75
0.05
175
130
0.5
0.1
60
15
85
tentative
V
A
V
5
Unit
K/W
m
mA
mA
mJ
pF
°C
W
Ω
V
V
V
V
V
A
V
A
A
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DSA30C60PB Summary of contents
Page 1
... J E non-repetitive avalanche energy AS I repetitive avalanche current AR IXYS reserves the right to change limits, conditions and dimensi © 2006 IXYS all rights reserved Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Conditions ...
Page 2
... Irms is typically limited by: 1. pin-to-chip resistance current capability of the chip. In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB IXYS reserves the right to change limits, conditions and dimensi © 2006 IXYS all rights reserved Conditions per pin* M Dim ...