DSA70C150HB IXYS, DSA70C150HB Datasheet - Page 4

• Manufacturer Part Number: DSA70C150HB
• Description: DIODE SCHOTTKY 150V 2X35A TO-247
• Manufacturer: IXYS

Specifications of DSA70C150HB

• Voltage - Forward (vf) (max) @ If: 900mV @ 35A
• Current - Reverse Leakage @ Vr: 680µA @ 150V
• Current - Average Rectified (io) (per Diode): 35A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Vrrm, (v): 150
• Ifavm, D = 0.5, Total, (a): 70
• Ifavm, D = 0.5, Per Diode, (a): 35
• @ Tc, (°c): 150
• Vf, Max, Tvj =125°c, (v): 0.77
• @ If, (a): 35
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 0.70
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[K/W]
I
[A]
Z
F(AV)
I
[A]
F
thJC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0.0
0
1
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current
T
150°C
125°C
25°C
VJ
0.2
=
50
drop characteristics
I
F(AV)
0.4
T
V
vs. case temperature T
C
100
0.6
F
[°C]
d = 0.5
[V]
10
0.8
150
DC
1.0
200
1.2
t [ms]
100
[mA]
P
C
[W]
I
0.0001
R
(AV)
0.001
0.01
100
0.1
40
30
20
10
10
0
1
0
0
Fig. 2 Typ. reverse current
Fig. 5 Forward power loss
125°C
100°C
50°C
150°C
75°C
25°C
T
VJ
=175°C
10
Data according to IEC 60747and per diode unless otherwise specified
40
characteristics
I
R
1000
vs. reverse voltage V
I
20
F(AV)
V
Single Pulse
R
80
[V]
[A]
30
120
d =
DC
0.5
0.33
0.25
0.17
0.08
40
10000
160
50
R
[pF]
C
T
1000
Note: All curves are per diode
900
800
700
600
500
400
300
200
100
DSA 70 C 150 HB
0
0
Fig. 3 Typ. junction capacitance
40
C
T
vs. reverse voltage V
V
R
80
[V]
T
120
VJ
= 25°C
20100531a
160
R