BAW79DE6327 Infineon Technologies, BAW79DE6327 Datasheet

BAW79DE6327

Manufacturer Part Number

BAW79DE6327

Description

DIODE 400V SOT89-T&R

Manufacturer

Infineon Technologies

Datasheets

1.BAW79DE6327.pdf (3 pages)

2.BAW79DE6327.pdf (4 pages)

3.BAW79DE6327.pdf (4 pages)

Specifications of BAW79DE6327

Voltage - Forward (vf) (max) @ If

1.6V @ 1A

Current - Reverse Leakage @ Vr

1µA @ 400V

Current - Average Rectified (io) (per Diode)

1A (DC)

Voltage - Dc Reverse (vr) (max)

400V

Reverse Recovery Time (trr)

1µs

Diode Type

Standard

Speed

Standard Recovery >500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Surface Mount

Package / Case

SOT-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BAW79DE6327XT
BAW79DE6327XT
Q1760993
SP000014594

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Silicon Switching Diodes

Type

BAW79A

BAW79B

BAW79C

BAW79D

Maximum Ratings

Parameter

Diode reverse voltage

Peak reverse voltage

Forward current

Peak forward current

Surge forward current, t = 1

Total power dissipation, T

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point

1 For calculation of R

Switching applications

High breakdown voltage

Common cathode

thJA

please refer to Application Note Thermal Resistance

Marking

= 115 °C

1 = A1

Symbol

stg

tot

thJS

Pin Configuration

2 = C1/2

EHA07003

BAW

79A

BAW

79B

100

3 = A2

-65 ... 150

150

BAW79A...BAW79D

BAW

79C

200

Package

SOT89

BAW

79D

Aug-20-2001

400

VPS05162

Unit

°C

K/W

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