BAT85,113 NXP Semiconductors, BAT85,113 Datasheet

DIODE SCHOTTKY 30V 200MA DO34

BAT85,113

Manufacturer Part Number
BAT85,113
Description
DIODE SCHOTTKY 30V 200MA DO34
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT85,113

Package / Case
DO-204AG, DO-34, Axial
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Through Hole
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A @ Ta=50C
Max Surge Current
5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1617-2
933624760113
BAT85 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT85,113
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1996 Mar 20
DATA SHEET
dbook, halfpage
BAT85
Schottky barrier diode
M3D050
DISCRETE SEMICONDUCTORS
2000 May 25

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BAT85,113 Summary of contents

Page 1

DATA SHEET dbook, halfpage M3D050 BAT85 Schottky barrier diode Product data sheet Supersedes data of 1996 Mar 20 DISCRETE SEMICONDUCTORS 2000 May 25 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Low forward voltage • Guard ring protected • Hermetically-sealed leaded glass package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I reverse current R t reverse recovery time rr C diode capacitance d THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Refer to SOD68 standard mounting conditions. ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 250 handbook, halfpage I F(AV) (mA) 200 150 100 Fig.2 Derating curve handbook, halfpage I R (1) (nA ( (3) − °C. (1) T amb = 25 °C. (2) T amb = −40 °C. (3) T amb Fig.4 Reverse current as a function of reverse voltage; typical values. ...

Page 5

... NXP Semiconductors Schottky barrier diode handbook, halfpage Fig.6 Reverse recovery definitions. 2000 May 25 t 10% 90 MRC129 - 1 5 Product data sheet BAT85 ...

Page 6

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads D DIMENSIONS (mm are the original dimensions UNIT max. max. max. mm 0.55 1.6 3.04 Note 1. The marking band indicates the cathode. OUTLINE VERSION IEC SOD68 2000 May 25 ( min. 25.4 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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