RB400DT146 Rohm Semiconductor, RB400DT146 Datasheet - Page 2

• Manufacturer Part Number: RB400DT146
• Description: DIODE SCHOTTKY 40V 0.5A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of RB400DT146

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 500mA
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 125pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 3A
• Operating Temperature Range: -40°C To
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 3 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 50 uA @ 30 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RB400DT146TR

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RB400D
1000
200
190
180
170
160
150
140
130
120
110
100
520
510
500
490
480
470
100
30
25
20
15
10
0.1
10
5
0
1
0
Ta=125℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VF DISPERSION MAP
Ta=75℃
Ct DISPERSION MAP
trr DISPERSION MAP
200
AVE:117.5pF
AVE:9.3ns
AVE:495.8mV
400
Ta=-25℃
Irr=0.25*IR
Ta=25℃
n=10pcs
IF=0.5A
Ta=25℃
IR=1A
Ta=25℃
n=30pcs
IF=0.5A
Ta=25℃
n=10pcs
f=1MHz
VR=0V
600
10000
1000
0.01
100
10
10
0.1
10
25
24
23
22
21
20
19
18
17
16
15
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
1
1
0
IFSM-CYCLE CHARACTERISTICS
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
NUMBER OF CYCLES
IR DISPERSION MAP
Ct DISPERSION MAP
AVE:0.510uA
15
AVE:20.66pF
Ifsm
2/3
20
10
8.3ms
25
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1cyc
30
Ta=25℃
VR=10V
n=10pcs
f=1MHz
Ta=25℃
8.3ms
VR=10V
n=30pcs
35
40
100
1000
10
100
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
10
10
5
0
8
6
4
2
0
1
1
0
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
IFSM-t CHARACTERISTICS
IFSM DISRESION MAP
IR DISPERSION MAP
AVE:1.117uA
10
TIME:t(ms)
AVE:5.30A
10
15
Ifsm
Ifsm
20
2011.03 - Rev.C
8.3ms
Ta=25℃
n=30pcs
VR=25V
t
f=1MHz
25
Data Sheet
1cyc
100
30