MBRM130LT1G ON Semiconductor, MBRM130LT1G Datasheet - Page 2

• Manufacturer Part Number: MBRM130LT1G
• Description: DIODE SCHOTTKY 30V 1A POWERMITE
• Manufacturer: ON Semiconductor

Specifications of MBRM130LT1G

• Voltage - Forward (vf) (max) @ If: 380mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 410µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: Powermite®
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.52 V @ 3 A
• Maximum Reverse Leakage Current: 410 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 1A
• Rev Curr: 410uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.52V
• Operating Temp Range: -55C to 125C
• Package Type: Power Mite
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 1 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRM130LT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (At Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
1.0
0.1
(I
(I
(I
(V
(V
(V
Working Peak Reverse Voltage
DC Blocking Voltage
(At Rated V
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
10
F
F
F
R
R
R
= 0.1 A)
= 1.0 A)
= 3.0 A)
0
= 30 V)
= 20 V)
= 10 V)
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
T
T
J
J
R
0.1
= 125°C
= 85°C
Figure 1. Typical Forward Voltage
, Square Wave, 100 kHz, T
0.2
T
J
= 150°C
0.3
R
, T
Rating
Rating
Rating
J
= 25°C)
C
T
0.4
J
= 135°C)
= −40°C
T
R
J
, T
= 25°C
C
0.5
= 135°C)
http://onsemi.com
MBRM130L
0.6
2
1.0
0.1
10
0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
T
Symbol
Symbol
Symbol
T
J
0.1
Figure 2. Maximum Forward Voltage
V
V
R
J
dv/dt
I
I
= 125°C
T
R
FRM
FSM
RWM
V
R
RRM
V
I
T
= 85°C
tjtab
I
stg
O
R
tja
R
J
tjl
F
0.2
T
J
T
T
= 150°C
J
J
0.30
0.38
0.52
0.41
0.13
0.05
= 25°C
= 25°C
(VOLTS)
0.3
−55 to 150
−55 to 125
10,000
Value
Value
Value
277
1.0
2.0
30
50
35
23
0.4
T
T
T
J
J
J
0.20
0.33
0.50
= −40°C
= 85°C
= 85°C
5.3
3.2
11
T
J
= 25°C
0.5
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
V
A
A
A
V
0.6